BCW 66F E6327

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	330mW
Frequency - Transition:	170MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BCW66

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The BCW 66F E6327 transistor is one of the most commonly used types of transistors in modern electronic devices. It is a single-emitter, small signal bipolar junction transistor (BJT) designed for general purpose applications. This popular transistor is typically used for general-purpose switching and amplification of signals.

The BCW 66F E6327 is a three-terminal device featuring NPN polarity. It has an emitter connected to its collector current, a base connected to its control current, and a collector connected to its output current. The maximum current gain for the device is generally about 200. It has a minimum guaranteed current gain of 50 at 250 MHz.

The BCW 66F E6327 is most commonly used in switching and amplifier applications. It is also used in voltage level shifting and driving applications such as current mirror circuits. Due to its low noise characteristics, it is able to provide low-cost amplification of weak signals. This transistor is most effective in switching operations wherein its input voltage has to be driven by a larger voltage. It can also be used in higher voltage circuits by connecting the emitter to a voltage source, with the base being driven directly.

The device has a maximum voltage rating of 25 volts, a power dissipation of 70 mW, a forward current gain of 200, and a maximum collector to emitter voltage of 15 volts. The reverse current gain is typically about 10%. The device has a minimum guaranteed frequency response of 250 MHz.

This transistor\'s working principle relies on the current flowing through the base-emitter junction being small and stable when the base is connected to its control current. This current is then amplified as it passes through the collector-emitter junction, allowing the device to operate as an amplifier. As the input voltage increases, the current flowing through the base-emitter junction also increases, resulting in a corresponding increase in current gain across the collector-emitter junction. As the current gain increases, the output voltage also increases proportionally.

In conclusion, the BCW 66F E6327 is a popular single-emitter small signal bipolar junction transistor designed for general-purpose switching and amplifier applications. It has a maximum voltage rating of 25 volts, a maximum collector to emitter voltage of 15 volts, a power dissipation of 70 mW, and a maximum current gain of 200. Its working principle is based on the current flowing through the base-emitter junction being amplified as it passes through the collector-emitter junction.

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