BCW 66KG E6433 Allicdata Electronics
Allicdata Part #:

BCW66KGE6433-ND

Manufacturer Part#:

BCW 66KG E6433

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN 45V 0.8A SOT-23
More Detail: Bipolar (BJT) Transistor NPN 45V 800mA 170MHz 500m...
DataSheet: BCW 66KG E6433 datasheetBCW 66KG E6433 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 500mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: BCW66
Description

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Introduction

The BCW 66KG E6433 is a bipolar junction transistor (BJT) single that is used to build oscillations, switches, amplifiers and transistors. It has an active current gain of 100 and can operate at temperatures ranging from -55°C to 200°C. It has a breakdown voltage of 5 V and is designed for applications with high frequency up to 100 KHz.

General Information

The BCW 66KG E6433 is a single transistor device that can be used in a variety of applications ranging from signal switching and amplification to oscillator circuitry. It is rated for a power dissipation of 1.5 W and a transistor gain of 100. It is designed for use in high frequency applications up to 100 kHz and its breakdown voltage is 5V. The temperature range for operation ranges from -55°C to 200°C and it can be used in combination with various resistors and capacitors to build oscillator circuits.

Working Principle

The BCW 66KG E6433 is a bipolar junction transistor (BJT) single that works on the principle of negative feedback. It is made up of three layers of semiconductor material arranged in such a way that they form a negative resistance. When a small current is passed through two of the layers, a larger current is produced in the third one. This current amplifies when passed through a resistor, allowing it to be used as an amplifier.

Application Field

The BCW 66KG E6433 can be used in a variety of applications including signal switching and amplification, oscillators, and transistors. In signal switching and amplification, the transistor can be used in combination with various resistors and capacitors to amplify a signal and switch it from one circuit to another. In oscillator applications, the device is used as an active component to create oscillations at high frequencies. In transistor circuitry, the device can be used as a switch for enabling or disabling circuits.

Conclusion

The BCW 66KG E6433 is a bipolar junction transistor single that is designed for applications with high frequency up to 100 KHz. It is used in a variety of applications including signal switching and amplification, oscillators, and transistors. The device is made up of three layers of semiconductor material that form a negative resistance and is rated for a power dissipation of 1.5 W and a transistor gain of 100. It operates at temperatures ranging from -55°C to 200°C and is capable of producing a larger current in the third layer when a small current is passed through the first two.

The specific data is subject to PDF, and the above content is for reference

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