BDP947H6327XTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 500mA, 1V
Power - Max:	5W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4
Base Part Number:	BDP947

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BDP947H6327XTSA1 Application Field and Working PrincipleAs one of the most commonly used forms of transistors, Bipolar Junction Transistors (BJT) are essential components used in a variety of different applications. The BDP947H6327XTSA1 is a type of BJT, and it has several useful capabilities that make it a valuable and versatile device. In this article, we will discuss the various application fields of the BDP947H6327XTSA1 and breaks down its working principle. The BDP947H6327XTSA1 is a NPN type of BJT with an “Amplifier Transistor” type of classification. This particular device has a maximum power rating of 500 Milliwatts, with a guaranteed minimum current gain of 200 and a maximum current gain of 400 when operated at a collector-emitter Voltage of 5 Volts. The BDP947H6327XTSA1 is widely used in many different kinds of applications and circuits. First, it is widely used in amplification, as its high current gain ratio makes it well-suited for this type of circuit. Additionally, a single BDP947H6327XTSA1 can drive up to five LEDs, making it useful for illuminating various components. Finally, it is often used as a switch or a router due to its low distortion components, allowing it to be used to send signals within a circuit. On the fundamental level, the BDP947H6327XTSA1 works in the same way as all other BJT transistors do. The basic working principle of the BJT transistor is that it operates on the basis of two pn-junctions. When the base voltage is increased, it pushes holes through the base-collector junction and allows electrons to flow through. This action then results in the transistor switching from a low-gain device to a high-gain device, allowing the transistor to change between its “OFF” and “ON” states. In order for a BDP947H6327XTSA1 to work properly, the voltage levels must be appropriately applied across the three pins of the device. When using the device in an amplifier, the voltage levels will be set at the base, collector, and emitter. The base voltage level is applied first, and as it is increased, it will push electrons through the base-collector junction, allowing an amplified output to be generated by the device. This effect is then further increased by the increasing collector and emitter voltage levels. Another important aspect of the working principle of a BDP947H6327XTSA1 is its high current gain ratio. This means that a small current flow in the base can result in a much larger current flow at the collector and emitter. Since the BDP947H6327XTSA1 has a guaranteed minimum current gain of 200, it is able to push more current than transistors with a lower current gain rating. This feature of the BDP947H6327XTSA1 makes it especially useful for applications that require high power amplification. The BDP947H6327XTSA1 is a versatile device with many different application fields and capabilities. Its high current gain ratio makes it well-suited for power amplification, while its robust construction and low distortion relationships make it useful for driving LEDs and sending signals within a circuit. Finally, its basic working principle is simple, allowing users to quickly understand how the device works. Together, these characteristics make the BDP947H6327XTSA1 a useful and valuable BJT device.

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