BDP949E6327HTSA1 Discrete Semiconductor Products

Transistors - Bipolar (BJT) - Single

The BDP949E6327HTSA1 is a single-transistor type of semiconductor device. It is a bipolar junction transistor (BJT) designed to handle high power applications. It is a three-pin device that operates in both the N-channel and the P-channel modes. The transistor has a maximum collector current of 7.0A, a breakdown voltage of 40V, and a maximum power rating of 350W.

The BDP949E6327HTSA1 is designed to be used in power management applications such as DC-DC converters, automotive power supplies, and power converters. It is also suitable for use in consumer electronics, industrial lighting, and renewable energy systems. It is suitable for use in high-frequency, high-efficiency power switching applications.

The device is constructed with a reverse-type NPN structure. This makes it highly suitable for driving high-current loads with minimal power loss. Its low saturation voltage and high current gain make it especially suitable for medium-power applications requiring high efficiency. Additionally, the transistor has a high switching speed and very low input capacitance, making it ideal for inrush current limiting applications.

The working principle of the BDP949E6327HTSA1 is that it is made up of two PNP transistors, each with its own base. The base of one of the transistors is connected to the collector of the other and the two bases are connected to the emitter. When the device is turned on, the current flows from the collector to the emitter, causing the two transistors to amplify the current.

The most important features of the BDP949E6327HTSA1 are its excellent switching performance, low saturation voltage, high current gain, high switching speed, and reliability. The device is capable of operating in a wide range of temperatures and is also very resistant to thermal shock. In short, this device is designed to offer excellent performance when applied in a variety of power management applications.