BDP948H6433XTMA1 Allicdata Electronics
Allicdata Part #:

BDP948H6433XTMA1-ND

Manufacturer Part#:

BDP948H6433XTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP 45V 3A SOT223
More Detail: Bipolar (BJT) Transistor PNP 45V 3A 100MHz 5W Surf...
DataSheet: BDP948H6433XTMA1 datasheetBDP948H6433XTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 5W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Part Number: BDP948
Description

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The BDP948H6433XTMA1 is a NPN silicon transistor, also known as a bipolar junction transistor (BJT). This type of power transistor can be used for amplification, switching, voltage regulation, signal modulation and many other circuit applications. It is commonly used in audio equipment, power supplies, motor controls, and automotive applications.

The BDP948H6433XTMA1 is a single junction transistor. It consists of a base, a collector, and an emitter. In a NPN configuration, the base-emitter junction is forward-biased and the collector-base junction is reverse-biased. The transistor works by having current flow into the base terminal, which then controls the current flow between the collector and emitter terminals. The gain of the transistor is determined by the current flowing into the base.

The BDP948H6433XTMA1 is designed with BeCu (beryllium copper) leads to provide improved thermal performance. It also has a low collector-emitter saturation voltage and a high transition frequency, which make it suitable for high-speed switching and amplifier circuits. Its maximum collector-emitter voltage is 350V, with a continuous power dissipation rating of 68W. The BDP948H6433XTMA1 is available in a TO-220 package.

The BDP948H6433XTMA1 can be used for various applications such as inverters, dc-dc converters, relay drivers, and motor drivers. It can also be used as a low-side switch in electronic circuits. The BDP948H6433XTMA1 can be used in audio amplifiers and preamplifiers, where its high transition frequency and high current handling capability make it an ideal choice. Its low power dissipation rating makes it suitable for automotive electronics and low-noise applications.

In summary, the BDP948H6433XTMA1 is a single junction NPN silicon transistor that is used for amplification, switching, voltage regulation, signal modulation, and other applications. It is designed with BeCu leads to provide improved thermal performance and low saturation voltage. It can be used for various applications such as inverters, dc-dc converters, relay drivers, motor drivers, and audio amplifiers.

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