Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	85 @ 500mA, 1V
Power - Max:	5W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4

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Introduction

The BDP954H6327XTSA1 is a Toshiba discrete Insulated Gate Bipolar Transistor (IGBT) transistor used in many high power applications. It is designed to provide a high frequency, high power switching device that is capable of operating at temperatures up to 150 degrees Celsius. This transistor is part of the Bipolar Junction Transistor (BJT) family and is a single junction.

Function

The BDP954H6327XTSA1 is typically used in applications requiring a high frequency switching device capable of withstanding high power, or in applications needing a drive source to control a high current or voltage. This transistor can be used in a wide range of industrial, automotive, and medical applications, as it can handle large-scale power, and fully extended temperatures. Applications where the BDP954H6327XTSA1 can be used range from electric power supplies to motor drives, end-stops, air-conditioning systems, digital lighting, LED lighting, power plant and industrial plant equipment, and more.

Structure

This semiconductor device consists of a P-N-P type of BJT that operates with a breakdown voltage of 75 volts and a maximum current rating of 27 Amps. The device includes a main current path between the collector and emitter and is released in a SMD (Surface Mount Device) type package, allowing it to be easily installed on a Printed Circuit Board (PCB). This transistor also contains an insulated gate and is designed to reduce switching losses even at high temperatures.

Characteristics

The BDP954H6327XTSA1 has a low output capacitance, providing signals with higher noise immunity. Moreover, it provides lower switching losses and can operate at high temperatures. This transistor has been designed for a range of different frequencies, depending on the amount of voltage applied, which could range from a few hundred kHz to a few MHz. Besides, this device has a high collector emitter saturation voltage, making it useful for low to medium power applications.

Conclusion

The Toshiba BDP954H6327XTSA1 is a discrete IGBT that is designed to provide a high frequency, high power switching device capable of operating at temperatures up to 150 degrees Celsius. It is part of the Bipolar Junction Transistor family and is a single junction transistor. This device is used in many high power applications, such as electric power supplies, motor drives, air-conditioning systems, digital lighting, LED lighting, power plant and industrial plant equipment, and others. It offers a low output capacitance, lower switching losses, and a high collector-emitter saturation voltage.

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