Allicdata Part #: | BDP948H6327XTSA1-ND |
Manufacturer Part#: |
BDP948H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP 45V 3A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 3A 100MHz 5W Surf... |
DataSheet: | BDP948H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 85 @ 500mA, 1V |
Power - Max: | 5W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Base Part Number: | BDP948 |
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Transistors - Bipolar (BJT) - Single
BDP948H6327XTSA1 is a type of Bipolar Junction Transistor (BJT) which belongs to the Single type of transistors. This transistor is a three-terminal device having a base, a collector, and an emitter. It is a high power NPN transistor manufactured at Hi-Sincer Technology Corp. and is qualified with AEC-Q101 standards. It is mainly used in automotive, commercial and telecommunication applications.
Application Field
BDP948H6327XTSA1 can be applicable in many circuits where medium and fiber optical amplifiers, medium and high power audio amplifiers, and motor controlling applications are required. Additionally, it is used in the power amplification stages in ADSL line driver, line driver application circuits.
Working Principle
The working principle of BDP948H6327XTSA1 is based on the BJT technology. When enough base current is supplied, a large amount of current starts flowing between the emitter and collector. It is like a current amplifier where the input signal at the base is large amplified at the collector and emitter.
The base current turns on the transistor and current starts flowing between collector and emitter in a Darlington configuration, meaning that it amplifies the current higher than a single transistor configuration. The base voltage of this transistor is typically 0.63V, and the input current is defined as the amount of current that flows through the base junction when the transistor is on.
Structure
The structure of BDP948H6327XTSA1 consists of three layers which are N-type semiconductor, P-type semiconductor and P-type semiconductor layer. The N-type semiconductor layer is the base layer which controls the whole structure. It makes the device active when its current flows. It takes the signals from the base and amplifies it using the junction of the collector and the emitter. The collector commonly takes its supply from a high voltage source while the emitter is connected to the ground.
Features
This high power NPN transistor has maximum current gain of 6300, minimum current gain of 300, output junction capacitance of 295pF, β variation 10%-50%, Pw ( Pulse Width)of 150us, Package type of DOJ-9 and the supply voltage of 8-80V. These features make it very suitable for audio amplifiers, motor controllers, power switching and high power applications.
The specific data is subject to PDF, and the above content is for reference
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