BDP948H6327XTSA1 Allicdata Electronics
Allicdata Part #:

BDP948H6327XTSA1-ND

Manufacturer Part#:

BDP948H6327XTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP 45V 3A SOT223
More Detail: Bipolar (BJT) Transistor PNP 45V 3A 100MHz 5W Surf...
DataSheet: BDP948H6327XTSA1 datasheetBDP948H6327XTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 5W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Part Number: BDP948
Description

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Transistors - Bipolar (BJT) - Single

BDP948H6327XTSA1 is a type of Bipolar Junction Transistor (BJT) which belongs to the Single type of transistors. This transistor is a three-terminal device having a base, a collector, and an emitter. It is a high power NPN transistor manufactured at Hi-Sincer Technology Corp. and is qualified with AEC-Q101 standards. It is mainly used in automotive, commercial and telecommunication applications.

Application Field

BDP948H6327XTSA1 can be applicable in many circuits where medium and fiber optical amplifiers, medium and high power audio amplifiers, and motor controlling applications are required. Additionally, it is used in the power amplification stages in ADSL line driver, line driver application circuits.

Working Principle

The working principle of BDP948H6327XTSA1 is based on the BJT technology. When enough base current is supplied, a large amount of current starts flowing between the emitter and collector. It is like a current amplifier where the input signal at the base is large amplified at the collector and emitter.

The base current turns on the transistor and current starts flowing between collector and emitter in a Darlington configuration, meaning that it amplifies the current higher than a single transistor configuration. The base voltage of this transistor is typically 0.63V, and the input current is defined as the amount of current that flows through the base junction when the transistor is on.

Structure

The structure of BDP948H6327XTSA1 consists of three layers which are N-type semiconductor, P-type semiconductor and P-type semiconductor layer. The N-type semiconductor layer is the base layer which controls the whole structure. It makes the device active when its current flows. It takes the signals from the base and amplifies it using the junction of the collector and the emitter. The collector commonly takes its supply from a high voltage source while the emitter is connected to the ground.

Features

This high power NPN transistor has maximum current gain of 6300, minimum current gain of 300, output junction capacitance of 295pF, β variation 10%-50%, Pw ( Pulse Width)of 150us, Package type of DOJ-9 and the supply voltage of 8-80V. These features make it very suitable for audio amplifiers, motor controllers, power switching and high power applications.

The specific data is subject to PDF, and the above content is for reference

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