BDP948E6327HTSA1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	85 @ 500mA, 1V
Power - Max:	5W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4
Base Part Number:	BDP948

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BDP948E6327HTSA1 application field and working principleTransistors are a type of electrical component that can be used for a variety of purposes, such as amplification, switching, and oscillation. BDP948E6327HTSA1 is a type of single bipolar junction transistor (BJT). This device is made from a combination of p-type and n-type semiconductor material, the junction between which creates three layers. This type of transistor has three terminals - base, collector, and emitter - and they all work together to allow current flow in a controlled way.Application Field BDP948E6327HTSA1 is a high-speed, low-noise transistor suitable for audio amplifiers, mobile switching circuits, and low-noise preamps. It is suitable for high-frequency amplifier applications demanding low noise and high frequency performance. This device is also suitable for switching applications such as converters, switch-mode power supplies, inverters, and power amplifiers. Working PrincipleBDP948E6327HTSA1 is a kind of bipolar junction transistor (BJT). It is designed to work using the base-emitter junction. When a voltage is applied to the base terminal, it creates an electric field across the base-emitter junction. This electric field creates a current that flows from the emitter to the collector and results in a gain in current across the collector-emitter junction. The base current of a BJT is used to control the amount of current flowing from the emitter to the collector. By increasing the base current, more electron current is drawn from the emitter and into the collector. As a result, the current gain increases. When the base current is decreased, the current gain decreases. This current gain is referred to as the current amplification factor (IC).Because the base-emitter junction is forward biased, it can also be used to turn high input voltages into lower output voltages. This process is referred to as voltage leveling. BJTs are also used for switching applications, such as for on/off controls and for turning a circuit on or off with a certain amount of current or voltage. BDP948E6327HTSA1 is a high-performance transistor with excellent performance characteristics. It has a standard E6327 package and better thermal resistance than other transistors of the same size. BDP948E6327HTSA1 also has excellent input and output impedance and low base-emitter voltage drop to ensure good current amplification. The device is suitable for high-frequency amplifier applications and its low-noise characteristic makes it an ideal choice for audio amplifiers, mobile switching circuits, and preamps. In conclusion, the BDP948E6327HTSA1 is a high-performance single bipolar junction transistor (BJT) device that can be used for audio amplifiers, mobile switching circuits, low-noise preamps, and other applications. It has three terminals –base, collector, and emitter – which all work together to allow current flow in a controlled way. BDP948E6327HTSA1 has a standard E6327 package and better thermal resistance than other transistors of the same size. It is suitable for high-frequency amplifier applications demanding excellent performance and its low-noise characteristics make it an ideal choice for audio amplifiers, mobile switching circuits, and preamps.

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