Allicdata Part #: | BDP953H6327XTSA1-ND |
Manufacturer Part#: |
BDP953H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN 100V 3A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 100MHz 5W Sur... |
DataSheet: | BDP953H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 1V |
Power - Max: | 5W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Base Part Number: | BDP953 |
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A BDP953H6327XTSA1 is a type of transistor known as a bipolar junction transistor, or BJT. This type of transistor is comprised of two bipolar regions and a single controlling gate. These transistors are used in many electronic applications, and are especially valuable for analog circuits. The most common application of a BDP953H6327XTSA1 BJT is as a switching device, which can be used to electrically control the flow of power in a circuit.
The base of the BDP953H6327XTSA1 is one of the two bipolar regions of the transistor. This region\'s purpose is to control the flow of current between the collector and emitter regions. When current passes through the base, it will be amplified and used to control the current flowing from the collector to the emitter. The base of a BDP953H6327XTSA1 will typically have its own resistor built in, which is used to regulate the current flowing through it.
The collector is the other bipolar region of the BDP953H6327XTSA1 transistor. This region receives the amplified current from the base and uses it to control the flow of current between the collector and the emitter. The collector will typically have a higher resistance than the base, which allows it to control current without consuming too much power.
The emitter is the last bipolar region of the transistor. This region serves as the output for the transistor, and will typically contain higher amounts of current than the collector. The current flowing from the emitter to the collector will be amplified depending on the amount of current passing through the base.
Because of its ability to amplify current, BDP953H6327XTSA1 transistors are used in a wide array of electronic applications. They are commonly employed as switches in digital circuits, as amplifiers in audio and video systems, and as current regulators in power supplies. They are also used as simple on/off switches in many consumer electronics devices, such as TV remotes and other small gadgets.
The working principle behind the BDP953H6327XTSA1 is based on two simple laws of electricity. The first law is Ohm\'s Law, which states that the current flowing through a conductor is proportional to the voltage applied across it. The second law is the Transistor Effect, which states that the current flowing through the collector of a transistor is proportional to the current flowing through its base.
Using these two laws, it is possible to design a circuit that will allow for the precise control of the current passing through a transistor. This is the basis for the BDP953H6327XTSA1 transistor, which is able to precisely control the output current passing through the collector-emitter region. This precise control makes the BDP953H6327XTSA1 BJT an invaluable component in many different electronic circuits and applications.
The specific data is subject to PDF, and the above content is for reference
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