Allicdata Part #: | BDP949H6327XTSA1-ND |
Manufacturer Part#: |
BDP949H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN 60V 3A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 100MHz 5W Surf... |
DataSheet: | BDP949H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 1V |
Power - Max: | 5W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Base Part Number: | BDP949 |
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BDP949H6327XTSA1 is a single transistor bipolar junction transistor (BJT), which comes in a surface mount SOT143B package. It is a NPN silicon device, which can be used in audio amplifiers, radio frequency systems, and low-noise signal amplification. It is an easy-to-use and reliable component, which offers high-speed switching and signal conditioning solutions.
The BDP949H6327XTSA1 can operate at a voltage range of 2.7V to 5.0V, with a maximum collector current of 500mA. It has a maximum collector-emitter voltage of 65V and a maximum power dissipation of 2.2W. The BDP949H6327XTSA1 has a wide operating temperature range of -65°C to +150°C, which makes it well-suited for operation in harsh environments.
The working principles of the BDP949H6327XTSA1 are based on the basic theory of BJTs. They consists of three terminals: the collector, base and emitter. The collector is the main terminal to which electrical current flows in and out. The base is the intermediate terminal, which can vary the current flow to and from the collector with the application of a small electrical current. The emitter is the terminal in which the current is sourced and its opposite end is the collector.
The BJTs operate according to the principle of negative feedback, meaning that when the applied base current increases, the collector current decreases and vice versa. This feedback mechanism is used for switching applications, where the current is used to switch the circuit on and off. The BJT can also be used for signal conditioning purposes, where the current is used to control the gain of the circuit.
The BDP949H6327XTSA1 is a versatile component that can be used in many different applications. It can be used in audio amplifiers, radio frequency systems, and low-noise signal amplification. It can also be used in switching applications, such as motor control, voltage regulator and level shifter circuits. Additionally, this device can be used for signal conditioning, for example for frequency filtering, signal manipulation and signal isolation.
In conclusion, the BDP949H6327XTSA1 is a high-performance single transistor bipolar junction transistor (BJT). It can be used in many different applications, from audio amplifiers and radio frequency systems to motor control and level shifter circuits. It operates according to the theory of negative feedback, which is used for controlling the current flow and for signal conditioning.
The specific data is subject to PDF, and the above content is for reference
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