BDP950E6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BDP950E6327HTSA1TR-ND |
Manufacturer Part#: |
BDP950E6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP 60V 3A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 3A 100MHz 5W Surf... |
DataSheet: | BDP950E6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 85 @ 500mA, 1V |
Power - Max: | 5W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Base Part Number: | BDP950 |
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Transistors are among the most influential components in the world of electronics. They have greatly impacted virtually every industry, and have been a major force behind the proliferation and growth of modern electronics. The BDP950E6327HTSA1 transistor is one such device. This particular transistor combines the features of both a field-effect transistor (FET) and a bipolar junction transistor (BJT). As a result, it offers a number of applications and has the ability to perform a number of functions.
BDP950E6327HTSA1 Application Field
The BDP950E6327HTSA1 transistor is primarily used in automotive, aerospace, and other power applications. It can also be found in medical, industrial, and telecommunications systems. Moreover, this transistor can be used in a variety of analog, digital, and smart applications, including power related designs. Some of the specific applications the transistor is used for include voltage and current sensing, power switching, motor control, light emitting diode (LED) drivers, and radio frequency (RF) operation. Essentially, if a reliable, cost-effective transistor is needed for any digital, analog, or power related sub-system, then this is a great option.
BDP950E6327HTSA1 Working Principle
The BDP950E6327HTSA1 transistor is a combination of a field-effect transistor (FET) and a bipolar junction transistor (BJT). As with most transistors, the primary purpose of this device is to amplify electrical signals. However, it has a unique ability to operate as either a FET or BJT depending on the specific application. When operating as a FET, the device uses a gate to control the current flow between the two output terminals (drain and source). On the other hand, when operating as a BJT, the device uses two p-n junctions, a base, and two emitters. The result is the ability to control both the voltage and current between the two terminals (collector and emitter).
The BDP950E6327HTSA1 is a great example of how advances in semiconductor technology have enabled transistors to continuously evolve and offer an ever-increasing number of applications. This particular transistor is ideal for any application that requires reliable, cost-effective solutions. Moreover, it’s ability to simultaneously operate as both a FET and BJT make it an even more attractive option for various industrial, automotive, aerospace, and power-related applications.
The specific data is subject to PDF, and the above content is for reference
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