BDX33A-S

BDX33A-S Application Field and Working Principle

The BDX33A-S is a single bipolar junction transistor (BJT) device, capable of operating at frequencies from DC up to a few hundred megahertz. It is an NPN device, and its active device is a silicon chip. The collector-emitter junction of the BDX33A-S is reverse p-n junction. It is mainly used for small-signal amplifier and switching applications.

Features

• Operates from -65°C to +150°C
• Ideal for small-signal amplifiers
• Up to 10MHz switch-mode operation
• Low leakage at 65°C
• Wide temperature range
• Available in a variety of packaging options

Physical Characteristics

The BDX33A-S has an array of physical characteristics that are beneficial to its application. The BOM package is approximately 13.7mm x 10mm with a body height of 3.2mm. Its maximum standing voltage of 60V ensures it can be used for applications in numerous environments. The thermal resistance of the device is about 0.12 K/W, and its power consumption is ≤ 0.7W. Additionally, its current gain of around 30 permits it to be used in signal amplifying applications. The allowable power dissipation of the device is 1W maximum.

Working Principle

The BDX33A-S is an NPN type device whose active layer consists of a silicon chip. At the collector-emitter junction, a reverse p-n diode exists which allows for current flow in one direction only. The junction is then connected to an apex which is composed of base-emitter doping in order to improve the device’s performance. When forward biased, the n-side of the junction becomes more conducting due to a recombination of charge carriers, allowing current to flow from collector to emitter.

Once the base-emitter junction is forward biased the current then follows a process known as “electron-hole” recombination. In this process, electrons move from the emitter to the collector, allowing electric current to flow. The electrons are then brought to the collector, in a process known as “electron-hole” recombination.

The collector-emitter junction of the BDX33A-S can handle voltages up to 60V, and, depending on the size of the current that the device is designed to pass, it is possible to bring the gain of the device up to 30. This makes it a great choice for small-signal amplifier and switch-mode applications.

Conclusion

In conclusion, the BDX33A-S is an NPN transistor device with physical dimensions of 13.7mm x 10mm and a body height of 3.2mm. It has a wide temperature range of -65°C to +150°C, a maximum standing voltage of 60V, and a current gain of about 30. It has low leakage at 65°C, and its power consumption is ≤ 0.7W. It can be used for small-signal amplifiers and switching applications, and the collector-emitter junction of the device is reverse p-n. The BDX33A-S is an effective, reliable, and easy-to-use transistor device.