BDX34A-S

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 8mA, 4A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 4A, 3V
Power - Max:	2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220

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Introduction to the BDX34A-S Transistor

The BDX34A-S is a single, bipolar junction transistor (BJT) designed for use in a wide range of applications. It is a versatile, low-power transistor that is commonly used in the regulated power supply designs and automotive applications. This article will discuss the field of application and working principle of the BDX34A-S.

Field of Application

The BDX34A-S is a low-power, NPN transistors for use in switch and amplification applications. It can be used as a switching transistor and for linear amplification. It is also widely used for low-voltage/low-current applications in automotive electronics. The BDX34A-S transistor is suitable for use in a variety of circuitry, such as in high-efficiency power supply designs and automotive applications.The BDX34A-S has a collector-emitter breakdown voltage of 45V, a continuous collector current of 500mA, and an thermal resistance of 8.0 °C/W. It has a maximum current gain of 80, and a low saturation voltage of 0.35V, making it an ideal choice for a wide variety of high-frequency and low-voltage applications.

Working Principle

The BDX34A-S works on the principle of a bipolar junction transistor. A bipolar junction transistor is composed of three terminals: the base, the collector and the emitter. The base is connected to the Silicon N-Type semiconductor, while the collector and emitter are connected to the P-Type semiconductor. When current flows through the base, the current is amplified by the transistor’s internal gain and flows from the collector to the emitter. The collector-emitter voltage is dependent on the base current, and the amount of current flowing from collector to emitter is dependent on the amount of current flowing to the base. This allows for the BDX34A-S to be used for both switching and amplifier purposes.

Conclusion

The BDX34A-S is a versatile, low-power transistor, suitable for use in a variety of fields and applications. It is an excellent choice for low-voltage/low-current applications in both automotive and regulated power supply designs. The BDX34A-S works on the principle of a bipolar junction transistor, and is capable of amplifying or switching current as necessary.

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