BDX33CG

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 6mA, 3A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 3A, 3V
Power - Max:	70W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Base Part Number:	BDX33

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BDX33CG Application Field and Working Principle

The BDX33CG is a type of bipolar junction transistor (BJT).[1] It is a type of single, NPN transistor specially designed for switching applications. The device is able to switch high voltages and currents with low saturation voltage and low on-state losses.

Features and Specifications

The BDX33CG has a number of characteristics that make it suitable for use in various applications. These include:• High-voltage and high-current switching capability • Low saturation voltage • Low on-state losses • Low thermal resistance • RoHS compliant packaging • Maximum rating of VCEO=250V, IC=3.5A • Operating temperature ranging from -55°C to 125°C

Applications

This type of transistor has a wide range of applications. It is commonly used in motor drivers, DC-to-DC converters, and in power switching or battery charging circuits. It is also suitable for PWM control and power supply circuits, as well as for interface and protection circuits for automotive applications.

Working Principle

The basic principle of a BJT is the control of current flow with a small base current. When a voltage is applied to the BJT\'s base, it will begin to conduct, allowing current to flow from the collector to the emitter. This is known as the biasing of the transistor. When the transistor is biasing, a change in the base-to-emitter voltage causes a larger change in the collector-to-emitter voltage. This is known as current gain (or amplification). The amount of current gain is determined by a combination of the device\'s internal functional design and the external circuit components. In the BDX33CG, the high current gain allows for a higher voltage and current switching capability. This makes it suitable for high-power applications where a large amount of current needs to be controlled.

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