BDX34A Allicdata Electronics
Allicdata Part #:

BDX34A-ND

Manufacturer Part#:

BDX34A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 60V 10A TO-220
More Detail: Bipolar (BJT) Transistor PNP 60V 10A 70W Through ...
DataSheet: BDX34A datasheetBDX34A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Power - Max: 70W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Base Part Number: BDX34
Description

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BDX34A bipolar transistors are widely used in various electronic circuits due to its various properties. The device requires two distinct current flows, collector and base currents, for its operation, as distinct from unipolar transistors. This device also has three pins, a collector, a base, and an emitter.

BDX34A transistors primarily find application in power circuits, where a low-to-moderate switching speed amplification is needed. The high-temperature operation (maximum junction temperature of 250 °C.) and the excellent thermal characteristic of the device allow for continuous high-power operation over a wide temperature range with no need for pre-heating. It is also used in many low-to-moderate speed digital circuits and in any circuit that requires a large voltage swing.

Working principle of BDX34A transistors is based on the concept of band gap engineering. By its design, BDX34A has three layers of semiconductor materials: an emitter, a base and a collector. Each layer has its own resistivity. As a current is applied to the emitter, it increases the number of optical holes on the base. These holes create band gap. It results in the movement of electrons from the collector to the base, which is conducted to the emitter. This in turn produces a current from the base to the collector.

In terms of its technical specifications, BDX34A is a two-lead, two-layer, 40V NPN silicon epitaxial transistor. With maximum collector-to-emitter voltage rating of 40V, this two-leads device provides rated DC current gain of 120 at collector current of 10 mA. With its maximum collector dissipation of 5.0 Watts, this device provides maximum frequency of operation of 1 MHz.

The combination of current gain, wide-band operation and low-power operation makes BDX34A transistors suitable for a variety of applications. From low-to-moderate speed digital circuits to circuit requiring high voltage swings, this device is used in robotics, computer equipment, consumer electronics, automotive electronics, telecom applications and more. In power electronics applications, it is used for switching and high frequency power amplification.

The specific data is subject to PDF, and the above content is for reference

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