Allicdata Part #: | BDX34BOS-ND |
Manufacturer Part#: |
BDX34B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 80V 10A TO-220AB |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 80V 10A ... |
DataSheet: | BDX34B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 6mA, 3A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 70W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | BDX34 |
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BDX34B application field and working principle
Introduction
The BDX34B is a silicon NPN high-voltage transistor that is capable of providing maximum power improvements with cost-effective packaging and performance. Using the industry-leading Bipedal Emitter technology, the BDX34B has a power-to-cost ratio that can be used to improve any application requiring high voltage transistors. Exploring the applications, characteristics and working principle of the BDX34B will help you find the best solution for your application.
Application field
The BDX34B is ideal for a wide range of applications due to its ability to produce maximum power improvement with cost-effective packaging. Its key features make it incredibly versatile, allowing it to be used for a range of applications, ranging from the most basic to the most sophisticated. With its bipolar technology and high power-to-cost ratio, the BDX34B is perfect for applications in the automotive, defense, industrial, and medical industries.This high voltage transistor can be used for voltage control, as a switch in DC-DC converters, and for voltage modulation in power amplifier circuits.
Characteristics
The BDX34B has some great characteristics that make it ideal for a wide range of applications. It has an operating range of -50°C to +125°C, a high-current gain of up to 1000 at 5V, a collector-emitter voltage of 1000V, and an incredibly low on-resistance of 0.08 ohms. Additionally, it is extremely stable, making it suitable for many different environments.
Working principle
The BDX34B works by passing electric current through a semiconductor material, usually silicon, to control the flow of electrons in a circuit. When electric current is applied, electrons flow through the transistor, generating power and voltage. This process allows electric current to be “manipulated” to provide specific end results, such as as controlling the voltage output of a device.
The BDX34B transformer works by using two base electrodes, known as the collector and emitter, to control the current flow. The emitter is positively charged, while the collector is negatively charged. When current passes through the emitter, it produces a cloud of electrons that flow through the transistor, activating the base. This activates the collector, which amplifies the electric current and produces a higher voltage output than the input.
In order for the BDX34B transistor to work properly, its base must remain in a certain state. It must operate within its specified operating range in order for the device to work properly. It must also be given enough power to maintain its desired state. If the power is too low, it won’t be able to produce the required voltage and current gains.
Conclusion
The BDX34B can be an incredibly useful device, as it is capable of providing maximum power improvements with cost-effective packaging and performance. With its bipolar technology and high power-to-cost ratio, the BDX34B is perfect for applications ranging from the most basic to the most sophisticated. Exploring the applications, characteristics and working principle of the BDX34B will help you find the best solution for your application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BDX34C | STMicroelect... | -- | 1000 | TRANS PNP DARL 100V 10A T... |
BDX33B | ON Semicondu... | -- | 1000 | TRANS NPN DARL 80V 10A TO... |
BDX34B | ON Semicondu... | -- | 1000 | TRANS PNP DARL 80V 10A TO... |
BDX33CTU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 10A TO-220... |
BDX34A | ON Semicondu... | -- | 1000 | TRANS PNP 60V 10A TO-220B... |
BDX34BTU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 80V 10A TO-220B... |
BDX34BTSTU | ON Semicondu... | -- | 1000 | TRANS PNP 80V 10A TO-220B... |
BDX33C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 100V 10ABi... |
BDX33D-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 120V 10ABi... |
BDX33A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 60V 10ABip... |
BDX33B-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 80V 10ABip... |
BDX34C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 100V 10ABi... |
BDX34D-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 120V 10ABi... |
BDX34A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 60V 10ABip... |
BDX33CG | ON Semicondu... | 0.62 $ | 312 | TRANS NPN DARL 100V 10A T... |
BDX34CG | ON Semicondu... | 0.64 $ | 1000 | TRANS PNP DARL 100V 10A T... |
BDX34BG | ON Semicondu... | -- | 1874 | TRANS PNP DARL 80V 10A TO... |
BDX33BG | ON Semicondu... | 0.65 $ | 935 | TRANS NPN DARL 80V 10A TO... |
BDX33C | STMicroelect... | -- | 132 | TRANS NPN DARL 100V 10A T... |
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