Allicdata Part #: | BDX33B-S-ND |
Manufacturer Part#: |
BDX33B-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN DARL 80V 10A |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 10A ... |
DataSheet: | BDX33B-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 6mA, 3A |
Current - Collector Cutoff (Max): | 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The BDX33B-S is a high voltage NPN switching transistor designed for telecommunications applications. It has a breakdown voltage rating of 70 V and is rated to handle up to 500 mA of continuous current. The BDX33B-S is manufactured using a low cost, easy-to-use surface mount package, making it well suited for high-density printed circuit board applications such as routers, switches, and integrated circuits.
The BDX33B-S belongs to the family of transistors called Bipolar Junction Transistors (BJT). This type of transistor is used as a semiconductor switch due to its ability to be easily switched between two distinct states. The BDX33B-S is a single transistor, meaning it has its own individual collector, base and emitter regions.
In its most basic form, the BDX33B-S consists of two diodes connected in parallel and two base terminals. In operation, a small current applied to the base causes a large current to flow through the collector and emitter terminals. This large current is controlled by adjusting the small current applied to the base.
The BDX33B-S can be used in a variety of applications. In switching applications, it can be used to control the flow of current in a circuit. It can also be used in amplifying applications such as amplifying electrical signals or increasing the power of a signal before it is sent to a speaker. In addition, it can be used for radio frequency (RF) power transistors for cellular phones, radio transmitters, and other low-power communications applications.
The BDX33B-S also has certain safety features built in. It is designed to be able to handle high current without causing any damage. Its low thermal resistance prevents it from heating up too much and damaging nearby components. Its surface mount package allows for easy mounting and makes it suitable for high-density applications.
In conclusion, the BDX33B-S is a high voltage NPN switching transistor that is suitable for a variety of applications. Its surface mount package makes it easy to use and its high breakdown voltage rating makes it well suited for high-density printed circuit board applications. Its low thermal resistance ensures that it won\'t overheat. Its safety features make it safe to use and reliable in operation.
The specific data is subject to PDF, and the above content is for reference
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BDX34D-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 120V 10ABi... |
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