Allicdata Part #: | 497-12439-5-ND |
Manufacturer Part#: |
BDX33C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN DARL 100V 10A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 10A... |
DataSheet: | BDX33C Datasheet/PDF |
Quantity: | 132 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 6mA, 3A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 70W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
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The BDX33C is a bipolar, NPN, silicon transistor designed primarily for use in power switching applications up to 200V. It is ideal for use in Class D audio amplifiers, power tools and even low-power lighting systems.
The BDX33C features a stable collector current of 0.5 A, and a maximum collector-emitter voltage rating of 200V. Additionally, the BDX33C features a maximum PNP collector-emitter voltage rating of -150V and a maximum PNP collector current of 0.3A. The device also features excellent thermal and electrical stability, making it the perfect choice for power switching applications.
The BDX33C is designed with a standard 3-pin TO-92 style package. It is designed to be connected to two power sources. The emitter is connected to the negative or ground potential, while the collector is connected to the positive or power potential. The base of the transistor is also connected to the positive potential to provide the base current.
The way a bipolar transistor works is based on two important phenomenon, the first being the emitter-collector flow of electrons in the NPN (or PNP) transistor, and the second being the base-collector flow of electrons. When a voltage is applied across the base-emitter junction, electrons from the emitter start to flow into the base, and when the current in the base reaches a certain level, it creates an inversion layer, which allows more current to flow from the base to the collector of the transistor.
When the positive voltage from the collector is connected, it creates an electric field that forces the electrons from the base-emitter junction to enter the collector. As the current flowing across the transistor increases, the collector-emitter voltage also increases with it, allowing for switching and amplification.
This basic principle is used in all kinds of transistor based logic and power switching applications. For example, in power switching applications, the current in the collector is increased until it reaches the threshold level, and when the desired current is reached, the power is switched on or off.
As for the BDX33C, its application field is primarily in power switching applications, such as in Class D audio amplifiers, power tools and low-power lighting systems. Due to its excellent thermal and electrical stability, it is an ideal choice for these applications. Additionally, due to its low power consumption and high current handling capabilities, it is also well suited for use in battery operated circuits, such as PIR sensors.
In conclusion, the BDX33C is a NPN, silicon bipolar transistor designed primarily for use in power switching applications, such as in Class D audio amplifiers, power tools and low-power lighting systems. It is designed with a standard 3-pin TO-92 style package, and is designed to be connected to two power sources, with the emitter connected to the negative or ground potential and the collector connected to the positive or power potential. It features excellent thermal and electrical stability, and its application field is primarily in power switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BDX34C | STMicroelect... | -- | 1000 | TRANS PNP DARL 100V 10A T... |
BDX33B | ON Semicondu... | -- | 1000 | TRANS NPN DARL 80V 10A TO... |
BDX34B | ON Semicondu... | -- | 1000 | TRANS PNP DARL 80V 10A TO... |
BDX33CTU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 10A TO-220... |
BDX34A | ON Semicondu... | -- | 1000 | TRANS PNP 60V 10A TO-220B... |
BDX34BTU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 80V 10A TO-220B... |
BDX34BTSTU | ON Semicondu... | -- | 1000 | TRANS PNP 80V 10A TO-220B... |
BDX33C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 100V 10ABi... |
BDX33D-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 120V 10ABi... |
BDX33A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 60V 10ABip... |
BDX33B-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 80V 10ABip... |
BDX34C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 100V 10ABi... |
BDX34D-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 120V 10ABi... |
BDX34A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 60V 10ABip... |
BDX33CG | ON Semicondu... | 0.62 $ | 312 | TRANS NPN DARL 100V 10A T... |
BDX34CG | ON Semicondu... | 0.64 $ | 1000 | TRANS PNP DARL 100V 10A T... |
BDX34BG | ON Semicondu... | -- | 1874 | TRANS PNP DARL 80V 10A TO... |
BDX33BG | ON Semicondu... | 0.65 $ | 935 | TRANS NPN DARL 80V 10A TO... |
BDX33C | STMicroelect... | -- | 132 | TRANS NPN DARL 100V 10A T... |
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