BDX33BG Allicdata Electronics
Allicdata Part #:

BDX33BGOS-ND

Manufacturer Part#:

BDX33BG

Price: $ 0.65
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 80V 10A TO-220AB
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 10A ...
DataSheet: BDX33BG datasheetBDX33BG Datasheet/PDF
Quantity: 935
1 +: $ 0.59220
10 +: $ 0.52353
100 +: $ 0.40118
500 +: $ 0.31713
1000 +: $ 0.25370
Stock 935Can Ship Immediately
$ 0.65
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Power - Max: 70W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: BDX33
Description

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Introduction

BDX33BG is a single-transistor bipolar junction transistor (BJT). It is very popular in products of aerospace and defence due to its ruggedness, durability and low noise level. Its working principle is based on thermionic emission. It uses a base-emitter junction which allows the passage of electrons when a voltage is applied to it. This allows current to pass through the junction, triggering the gain of the transistor.

Working Principle

The working principle of BDX33BG is based on the bandgap effect. It uses a special kind of resistor called the collector that allows electrons to flow between the emitter and the base. When a voltage is applied to the base, it creates a space-charge region, which consists of mobile electrons and holes. The electrons in the space-charge region move towards the emitter due to the electron affinity of the emitter, while the holes move towards the collector due to the electron attraction of the collector.

Once the electrons and holes reach the emitter and collector respectively, electron-hole pairs will be formed. These electron-hole pairs contribute to the base current and the collector current, forming a circuit from the base to the collector. The resulting current gain of this circuit is known as "beta" and is the desired performance of the BDX33BG.

Application Fields

BDX33BG transistors are widely used in a range of applications due to its enhanced ruggedness and durability. It is found in applications with high-power requirements, such as military electronics and space applications. It is also used in automotive and consumer electronics applications, where its high robustness and relatively low noise make it a valuable asset. Additionally, it is used in many home and office appliances, from air conditioners to LED televisions.

Advantages

There are several advantages to using BDX33BG transistors in applications. Firstly, it has an extremely low noise figure, which is exceptionally advantageous for applications that require very low noise. Secondly, it has a high ruggedness and durability, which is much more resilient to harsh conditions when compared to other types of transistors. Lastly, the BDX33BG has a high gain, which is advantageous in applications where fast switching is needed.

Conclusion

BDX33BG transistors are widely used in a variety of applications due to their performance and durability. Their working principle is based on the bandgap effect, which allows electrons to pass through the base-emitter junction and trigger the gain of the transistor. They have an extremely low noise figure, high ruggedness and high gain, making them a valuable asset in many applications such as aerospace, military electronics, automotive, consumer electronics and home and office appliances.

The specific data is subject to PDF, and the above content is for reference

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