Allicdata Part #: | BDX33BGOS-ND |
Manufacturer Part#: |
BDX33BG |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 80V 10A TO-220AB |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 10A ... |
DataSheet: | BDX33BG Datasheet/PDF |
Quantity: | 935 |
1 +: | $ 0.59220 |
10 +: | $ 0.52353 |
100 +: | $ 0.40118 |
500 +: | $ 0.31713 |
1000 +: | $ 0.25370 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 6mA, 3A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 70W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | BDX33 |
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Introduction
BDX33BG is a single-transistor bipolar junction transistor (BJT). It is very popular in products of aerospace and defence due to its ruggedness, durability and low noise level. Its working principle is based on thermionic emission. It uses a base-emitter junction which allows the passage of electrons when a voltage is applied to it. This allows current to pass through the junction, triggering the gain of the transistor.
Working Principle
The working principle of BDX33BG is based on the bandgap effect. It uses a special kind of resistor called the collector that allows electrons to flow between the emitter and the base. When a voltage is applied to the base, it creates a space-charge region, which consists of mobile electrons and holes. The electrons in the space-charge region move towards the emitter due to the electron affinity of the emitter, while the holes move towards the collector due to the electron attraction of the collector.
Once the electrons and holes reach the emitter and collector respectively, electron-hole pairs will be formed. These electron-hole pairs contribute to the base current and the collector current, forming a circuit from the base to the collector. The resulting current gain of this circuit is known as "beta" and is the desired performance of the BDX33BG.
Application Fields
BDX33BG transistors are widely used in a range of applications due to its enhanced ruggedness and durability. It is found in applications with high-power requirements, such as military electronics and space applications. It is also used in automotive and consumer electronics applications, where its high robustness and relatively low noise make it a valuable asset. Additionally, it is used in many home and office appliances, from air conditioners to LED televisions.
Advantages
There are several advantages to using BDX33BG transistors in applications. Firstly, it has an extremely low noise figure, which is exceptionally advantageous for applications that require very low noise. Secondly, it has a high ruggedness and durability, which is much more resilient to harsh conditions when compared to other types of transistors. Lastly, the BDX33BG has a high gain, which is advantageous in applications where fast switching is needed.
Conclusion
BDX33BG transistors are widely used in a variety of applications due to their performance and durability. Their working principle is based on the bandgap effect, which allows electrons to pass through the base-emitter junction and trigger the gain of the transistor. They have an extremely low noise figure, high ruggedness and high gain, making them a valuable asset in many applications such as aerospace, military electronics, automotive, consumer electronics and home and office appliances.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BDX34C | STMicroelect... | -- | 1000 | TRANS PNP DARL 100V 10A T... |
BDX33B | ON Semicondu... | -- | 1000 | TRANS NPN DARL 80V 10A TO... |
BDX34B | ON Semicondu... | -- | 1000 | TRANS PNP DARL 80V 10A TO... |
BDX33CTU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 100V 10A TO-220... |
BDX34A | ON Semicondu... | -- | 1000 | TRANS PNP 60V 10A TO-220B... |
BDX34BTU | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 80V 10A TO-220B... |
BDX34BTSTU | ON Semicondu... | -- | 1000 | TRANS PNP 80V 10A TO-220B... |
BDX33C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 100V 10ABi... |
BDX33D-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 120V 10ABi... |
BDX33A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 60V 10ABip... |
BDX33B-S | Bourns Inc. | 0.0 $ | 1000 | TRANS NPN DARL 80V 10ABip... |
BDX34C-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 100V 10ABi... |
BDX34D-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 120V 10ABi... |
BDX34A-S | Bourns Inc. | 0.0 $ | 1000 | TRANS PNP DARL 60V 10ABip... |
BDX33CG | ON Semicondu... | 0.62 $ | 312 | TRANS NPN DARL 100V 10A T... |
BDX34CG | ON Semicondu... | 0.64 $ | 1000 | TRANS PNP DARL 100V 10A T... |
BDX34BG | ON Semicondu... | -- | 1874 | TRANS PNP DARL 80V 10A TO... |
BDX33BG | ON Semicondu... | 0.65 $ | 935 | TRANS NPN DARL 80V 10A TO... |
BDX33C | STMicroelect... | -- | 132 | TRANS NPN DARL 100V 10A T... |
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