BDX34D-S

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Transistors - Bipolar (BJT) - Single

A bipolar junction transistor (BJT) is a type of transistor used for amplifying or switching electronic signals. The most common type of BJT is referred to as an npn bipolar junction transistor (NPN BJT). It is composed of two p-type and one n-type material and it has three terminals: emitter, collector, and base.

The BDX34D-S is an example of an NPN BJT. This particular device is manufactured using General Electric’s silicon epitaxial process and is characterized by its high current-gain and power-gain capacitances. It is designed for use in audio amplifier circuits, sampling and level detector circuits, and voltage comparison circuits.

This device is capable of providing gain of up to 500 (at a DC current of 5mA) when operated in the active region. This occurs when electrons injected from the base into the collector reach an imbalance due to the higher mobility of holes in the p-type material. As the current flows from the emitter to the collector, it creates a voltage drop across the collector junction, thus amplifying the signal.

In addition to amplifying signals, the BDX34D-S can also be used for switching applications. When the base-emitter junction is biased forward, the device is turned on and a current is allowed to flow from emitter to collector. The device can then be used as a switch for controlling other devices such as relays, solenoids, or lamps. The device will remain on until the base voltage is reversed, which will cause the transistor to turn off and the current to cease.

The BDX34D-S is a robust device that has a wide range of applications and is capable of operating at high voltage and current levels. It is well suited for use in audio amplifiers, voltage comparison circuits, and sampling and level detector circuits. Additionally, it can be used for switching applications where a low-level signal needs to control a high-level current.

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