BFP405E6327BTSA1 Allicdata Electronics

BFP405E6327BTSA1 Discrete Semiconductor Products

Allicdata Part #:

BFP405E6327BTSA1TR-ND

Manufacturer Part#:

BFP405E6327BTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN RF 4.5V SOT-343
More Detail: RF Transistor NPN 5V 25mA 25GHz 75mW Surface Mount...
DataSheet: BFP405E6327BTSA1 datasheetBFP405E6327BTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 23dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
Base Part Number: BFP405
Description

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The BFP405E6327BTSA1 is a type of transistor, specifically, it is a bipolar transistors, related to the field of radio frequency (RF).

A transistor is an important type of electrical component that is often used to amplify an electrical signal or to control a large amount of power. Due to its many useful properties and its ability to be used in a wide range of applications, the invention of the transistor has been called by some as one of the most important inventions of all time.

The BFP405E6327BTSA1 is a type of transistor specifically designed to be used in RF applications. It is a bipolar transistor, which means it consists of three layers (base, emitter, collector) made up of channels into which a voltage can be applied across different pairs of layers. This type of transistor is designed such that the electrical current transmission between layers occurs in two directions as opposed to unipolar transistors which only allow current flow in one direction.

The BFP405E6327BTSA1 is designed to have several properties that make it ideal for use in RF applications. It has a very low on-state resistance (Rds on) of only 0.3 ohms at room temperature, and a high gain-bandwidth product of 700 MHz. The device also has a low capacitance (Ciss) of only 15 pF, allowing for minimal signal losses and improved signal-to-noise ratio. The package size of the BFP405E6327BTSA1 is also quite small, making it convenient for use in circuit boards with limited space.

In terms of its working principle, the BFP405E6327BTSA1 operates similarly to other types of bipolar transistors in that it needs two input signals (base and emitter) to generate an output signal on the collector. The strength of the current output is also largely dependent on the strength of the input signal. When an input signal is applied to the base of the transistor, it creates an electric field within the device which causes electrons to move from the emitter to the collector, producing an output current.

In summary, the BFP405E6327BTSA1 is a type of bipolar transistor specifically designed for use in RF applications. It boasts several properties that make it suitable for this purpose, such as a low Rds on and a high gain-bandwidth product. The operating principle of this device relies on the movement of electrons caused by an electric field within its three layers which produces the output current. It is due to these properties and operating principles that this device is well-suited for use in RF applications.

The specific data is subject to PDF, and the above content is for reference

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