Allicdata Part #: | BFP450E6433BTMA1TR-ND |
Manufacturer Part#: |
BFP450E6433BTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR NPN RF 4.5V SOT-343 |
More Detail: | RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mou... |
DataSheet: | BFP450E6433BTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5V |
Frequency - Transition: | 24GHz |
Noise Figure (dB Typ @ f): | 1.25dB @ 1.8GHz |
Gain: | 15.5dB |
Power - Max: | 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 50mA, 4V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | PG-SOT343-4 |
Base Part Number: | BFP450 |
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A BFP450E6433BTMA1 is a high frequency, general purpose amplifier component. It is a bipolar junction transistor (BJT) that is most commonly used in radio frequency (RF) amplifications applications. It is derived from NPN technology and consists of the three separate terminal elements; the base, collector and emitter. The component is a low cost solution for integrating high speed power amplifying applications into smaller form factors.
BFP450E6433BTMA1 amplifiers feature excellent gain linearity as well as corresponding improved efficiency. The component\'s low current consumption results in improved integration and its high gain to size ratio makes it suitable for use in many applications which require small size and low power consumption. Its slow start delay reduces the impact of electro-magnetic interference (EMI) and its excellent surface mount design ensures that the component will stay firmly mounted on the board.
The component is designed to provide a low cost stable, linear and power-efficient amplification solution. It is designed to deliver a specified small signal gain at various frequencies while consuming a minimal amount of current. Its high-frequency power capacity of up to 150 MHz and low quiescent current of 2mA also make it a suitable amplifier solution for use in RF applications.
BFP450E6433BTMA1 amplifiers have many applications; including RF communicatio applications, motor control, power regulation, gesture recognition and more. The component is suitable for use in integrated circuits due to its small form factor, low power consumption and low cost. In addition, it is also suitable for use in highly sensitive, low power RF receivers. With its low input impedance, it provides low-noise amplification and ensures excellent linearity when used in high frequency signal sources.
The working principle of the BFP450E6433BTMA1 semiconductor component is based on an NPN transistor technology. The component consists of three main terminals; namely; the base, collector and emitter. In order for current to flow in the component, a voltage must be supplied to the base terminal. This voltage acts as a signal which then produces a current in the collector and emitter. The current produced in the collector is amplified by the component and then passed to the output to either be used or sent back to the circuit.
The BFP450E6433BTMA1 component provides amplification and is widely used in RF amplification applications. This component is a low cost and highly integrated solution for amplifying signals of various frequencies, while having low-current consumption which results in improved integration and low cost. The component has many applications which include RF communication, motor control, power regulation and gesture recognition.
The specific data is subject to PDF, and the above content is for reference
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