Allicdata Part #: | BFP410H6327XTSA1TR-ND |
Manufacturer Part#: |
BFP410H6327XTSA1 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 25GHZ 4.5V SOT343 |
More Detail: | RF Transistor NPN 5V 40mA 25GHz 150mW Surface Moun... |
DataSheet: | BFP410H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09131 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5V |
Frequency - Transition: | 25GHz |
Noise Figure (dB Typ @ f): | 1.2dB @ 2GHz |
Gain: | 21.5dB |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 13mA, 2V |
Current - Collector (Ic) (Max): | 40mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | SOT-343 |
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The BFP410H6327XTSA1 is a bipolar RF transistor produced by NXP Semiconductors, and is commonly used in RF applications including Ham Radio, facial recognition and medical equipment. This particular product has a maximum gain of 9 dB and a maximum frequency of 6GHz.
The BFP410H6327XTSA1 is designed to work to its maximum efficiency at room temperature. It is characterized by high and stable gain, low noise figure and high gain linearity, making it suitable for use in the most demanding applications.
The key components of the BFP410H6327XTSA1 are two N-type Field Effect Transistors (N-FETs), and two P-type Field Effect Transistors (P-FETs). These two sets of transistors allow the device to operate at higher speeds than other bipolar transistors in the same frequency range.
The working principle of the BFP410H6327XTSA1 revolves around two basic properties: the current gain and the voltage gain. The current gain is the amount of current that is amplified from the input to the output. The gain of the device is determined by the ratio of the output voltage to the input voltage. The output voltage is also affected by the load that the device is connected to.
The other non-transistor components of the BFP410H6327XTSA1 are small capacitors and resistors, which help the device to keep its voltage gain stable and the device can operate in high frequencies without distortion. The power output of the device is also limited by the input voltage. The amount of power the device can handle is also determined by the maximum gain of the device.
The BFP410H6327XTSA1 is commonly used in high-quality RF applications. It can be used in radios, radar systems, facial recognition systems, medical equipment, navigation systems and other wireless applications. The device is also suitable for use in the most demanding applications, such as where accuracy and precision are of utmost importance.
In conclusion, the BFP410H6327XTSA1 is a high-quality RF transistor, designed specifically for use in demanding applications. It has high gain, low noise and high linearity, making it suitable for a variety of applications. It is able to operate at higher frequencies than other bipolar transistors in the same frequency range, and can handle high power outputs with its input voltage limitation. The device is ideal for use in radios, radar, facial recognition, medical equipment, navigation systems and other wireless applications.
The specific data is subject to PDF, and the above content is for reference
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