BFP410H6327XTSA1 Allicdata Electronics
Allicdata Part #:

BFP410H6327XTSA1TR-ND

Manufacturer Part#:

BFP410H6327XTSA1

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS RF NPN 25GHZ 4.5V SOT343
More Detail: RF Transistor NPN 5V 40mA 25GHz 150mW Surface Moun...
DataSheet: BFP410H6327XTSA1 datasheetBFP410H6327XTSA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.09131
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 21.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Description

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The BFP410H6327XTSA1 is a bipolar RF transistor produced by NXP Semiconductors, and is commonly used in RF applications including Ham Radio, facial recognition and medical equipment. This particular product has a maximum gain of 9 dB and a maximum frequency of 6GHz.

The BFP410H6327XTSA1 is designed to work to its maximum efficiency at room temperature. It is characterized by high and stable gain, low noise figure and high gain linearity, making it suitable for use in the most demanding applications.

The key components of the BFP410H6327XTSA1 are two N-type Field Effect Transistors (N-FETs), and two P-type Field Effect Transistors (P-FETs). These two sets of transistors allow the device to operate at higher speeds than other bipolar transistors in the same frequency range.

The working principle of the BFP410H6327XTSA1 revolves around two basic properties: the current gain and the voltage gain. The current gain is the amount of current that is amplified from the input to the output. The gain of the device is determined by the ratio of the output voltage to the input voltage. The output voltage is also affected by the load that the device is connected to.

The other non-transistor components of the BFP410H6327XTSA1 are small capacitors and resistors, which help the device to keep its voltage gain stable and the device can operate in high frequencies without distortion. The power output of the device is also limited by the input voltage. The amount of power the device can handle is also determined by the maximum gain of the device.

The BFP410H6327XTSA1 is commonly used in high-quality RF applications. It can be used in radios, radar systems, facial recognition systems, medical equipment, navigation systems and other wireless applications. The device is also suitable for use in the most demanding applications, such as where accuracy and precision are of utmost importance.

In conclusion, the BFP410H6327XTSA1 is a high-quality RF transistor, designed specifically for use in demanding applications. It has high gain, low noise and high linearity, making it suitable for a variety of applications. It is able to operate at higher frequencies than other bipolar transistors in the same frequency range, and can handle high power outputs with its input voltage limitation. The device is ideal for use in radios, radar, facial recognition, medical equipment, navigation systems and other wireless applications.

The specific data is subject to PDF, and the above content is for reference

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