BFP420H6327XTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BFP420H6327XTSA1TR-ND |
Manufacturer Part#: |
BFP420H6327XTSA1 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 25GHZ 4.5V SOT343 |
More Detail: | RF Transistor NPN 5V 35mA 25GHz 160mW Surface Moun... |
DataSheet: | BFP420H6327XTSA1 Datasheet/PDF |
Quantity: | 33000 |
3000 +: | $ 0.09316 |
6000 +: | $ 0.08715 |
15000 +: | $ 0.08114 |
30000 +: | $ 0.07693 |
75000 +: | $ 0.07513 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5V |
Frequency - Transition: | 25GHz |
Noise Figure (dB Typ @ f): | 1.1dB @ 1.8GHz |
Gain: | 21dB |
Power - Max: | 160mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 20mA, 4V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | SOT-343 |
Base Part Number: | BFP420 |
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The BFP420H6327XTSA1 is a transistor from the family of bipolar junction transistors designed specifically for radio frequency (RF) applications. It is manufactured in a high speed Silicon-Germanium (SiGe) process and is composed of high-voltage NPN epitaxial base structure.
The BFP420H6327XTSA1 is a voltage-controlled current regulator that provides a high degree of power (>20 W) and frequency (>10 GHz) capabilities. It is capable of handling up to 50 V collector-emitter voltage while exhibiting current levels up to 2.5 A. It has a maximum gain at midband frequency of 15 dB, an excellent gain flatness of less than 1 dB across the whole band, and a low noise figure of 6dB or less.
The device is typically used in power amplifiers, power supplies, and other high-frequency, high-power applications. It can be used in both single-ended and balanced configurations. The device is also available in a wide variety of packages and pinouts, making it suitable for various topologies and combinations.
The BFP420H6327XTSA1 is a voltage feedback, high-current device that utilizes a simple NPN transistor circuit topology. It has a bias voltage input, a differential collector output, and an emitter output. The device operates by applying a bias voltage to the base of the transistor, which will then develop either a current or voltage regulator action. The differential collector output has two outputs that can be used as either differential outputs or single outputs depending on the application.
The main working principle of the BFP420H6327XTSA1 is extremely simple. With a small input bias voltage applied to the base and a dynamic emitter resistance connected across the emitter, the transistor will self bias to a particular current regulator state. This state will be dependent on the value of the emitter resistance, the base-emitter voltage, and the collector-emitter voltage. For a given collector-emitter voltage, the current regulator state will determine the current gain of the transistor, meaning that the collector current will be inversely proportional to the base-emitter voltage.
The BFP420H6327XTSA1 offers excellent linearity and wide dynamic range capabilities across a wide range of frequencies. Many modern applications that require the combination of high power and low noise are optimally served by the BFP420H6327XTSA1. These applications range from communications and radar systems to RF amplifiers, microwave ovens, and Bluetooth systems.
Overall, the BFP420H6327XTSA1 is a versatile transistor designed specifically for radio frequency (RF) applications and is ideal for applications that require high power outputs and low noise. With its wide selection of pinouts and packages, this transistor provides engineers with flexibility and scalability across a wide range of applications. The high-speed SiGe manufacturing process ensures stable performance and uniform responses across a wide range of frequencies and power levels.
The specific data is subject to PDF, and the above content is for reference
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