Allicdata Part #: | BFP405E6433HTMA1TR-ND |
Manufacturer Part#: |
BFP405E6433HTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF NPN 4.5V SOT-343 |
More Detail: | RF Transistor NPN 5V 25mA 25GHz 75mW Surface Mount... |
DataSheet: | BFP405E6433HTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5V |
Frequency - Transition: | 25GHz |
Noise Figure (dB Typ @ f): | 1.25dB @ 1.8GHz |
Gain: | 23dB |
Power - Max: | 75mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 4V |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | PG-SOT343-4 |
Base Part Number: | BFP405 |
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The BFP405E6433HTMA1 is a field-effect transistor (FET) commonly used in radio-frequency (RF) applications. Its main purpose is to amplify signals over a wide range of frequencies. The BFP405E6433HTMA1 is part of a family of FETs specifically designed for RF applications. As such, it offers high levels of performance in terms of signal gain and noise suppression.
The BFP405E6433HTMA1 is a two-terminal FET, with a drain and a source. The drain is typically used as a signal input and the source as the output. The FET works on the principle of Quantum Tunneling. This type of quantum mechanical effect allows electrons to tunnel through a barrier even when there is insufficient energy for them to do so. This tunneling effect produces a current flow between the two terminals of the FET.
The FET also acts as a switch, with the drain controlling the conducting state of the source. When a voltage is applied to the drain, the FET will conduct, allowing a current flow from the source to the drain. The voltage applied to the drain is known as the gate voltage, as it controls the operation of the FET. The FET can be used in either the switching or the amplification of RF signals.
The BFP405E6433HTMA1 is well-suited for use in a range of applications including, but not restricted to, wireless systems, medical instruments, radar systems and test equipment. The BFP405E6433HTMA1 provides high performance and is also cost effective. This makes it one of the most popular FETs used in RF application, and it can be used in both commercial and military applications.
In summary, the BFP405E6433HTMA1 is a two-terminal FET designed for use in radio-frequency applications. It works on the principle of Quantum Tunneling, which allows electrons to tunnel through a barrier even when there is insufficient energy for them to do so. This allows the BFP405E6433HTMA1 to be used for both signal amplification and switching. The BFP405E6433HTMA1 is capable of providing high levels of performance and is cost effective, making it a popular choice for use in numerous applications across both commercial and military fields.
The specific data is subject to PDF, and the above content is for reference
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