BFP450E6327BTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BFP450E6327BTSA1TR-ND |
Manufacturer Part#: |
BFP450E6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN RF 4.5V SOT-343 |
More Detail: | RF Transistor NPN 5V 100mA 24GHz 450mW Surface Mou... |
DataSheet: | BFP450E6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 5V |
Frequency - Transition: | 24GHz |
Noise Figure (dB Typ @ f): | 1.25dB @ 1.8GHz |
Gain: | 15.5dB |
Power - Max: | 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 50mA, 4V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | PG-SOT343-4 |
Base Part Number: | BFP450 |
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The BFP450E6327BTSA1 is a RF bipolar junction transistor (BJT) component used widely in a variety of high frequency and high power applications, such as radio transmitters, amplifiers and oscillators. With its low-voltage operation, small package and higher frequency performance, the BFP450E6327BTSA1 is a popular choice of RF device.
The BFP450E6327BTSA1 component has a maximum voltage rating of 6 V and a collector current of 40 mA. It also has a power gain of 19 dB and a frequency range of 890 MHz - 4.3 GHz, making it an ideal choice for applications requiring reliability in wide frequency ranges. Additionally, it has a high breakdown voltage of 37 V, which makes it suitable for high power applications.
The BFP450E6327BTSA1 component has a TO-92 package, making it suitable for space-constrained applications. It also has a maximum junction temperature of 150 degrees Celsius and a maximum dissipation power of 500 mW, making it a highly energy efficient device.
The working principle of the BFP450E6327BTSA1 component is the same as that of any other bipolar junction transistor. In this type of device, current flows between two electrodes (the emitter and the collector) when a voltage is applied to the base terminal. This current flow, also referred to as transistor action, allows the device to amplify signals when it is used in an amplifying circuit.
The BFP450E6327BTSA1 is used in a variety of applications due to its high power gain and frequency range. It is commonly used in radio transmitters and receivers, RF amplifiers and oscillators, amplifiers for audio signals and modulators, and voltage-regulated power supplies. In addition, the device is suitable for use in a wide range of mobile communications applications.
The BFP450E6327BTSA1 component is a popular choice for use in a variety of high-frequency and high-power applications due to its low-voltage operation, small package, and excellent performance. With its impressive power gain and frequency range, the device is an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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