BFR 182 B6663

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain:	12dB ~ 18dB
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 8V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BFR182

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Introduction about BFR 182 B6663

BFR 182 B6663 is a specific type of transistor. It is a bi-polar junction transistor (BJT) in an RF-leadless package, with a type number of BFR 182 B6663. The BFR 182 B6663 transistor is capable of high frequency operation and can be used in microwave circuits, as well as medium and high frequency signal amplification applications. The main difference between BFR 182 B6663 and other types of transistors is that it is designed with a built-in RF-leadless package, meaning it does not require traditional external connections that might cause signal noise, so it can be used in high-frequency applications. Its small size, however, means that the output power is limited.

Applications of BFR 182 B6663

The BFR 182 B6663 transistor can be used in many different applications. It is widely used in radio-frequency (RF) communications systems, such as radio sets and base stations. It is also used in microwave circuits, such as amplifiers, modulators, and mixers. Additionally, it is a heavy duty switching transistor and is well suited for use in medium and high frequency signal amplification applications, such as in audio amplifiers, switching circuits, and motor control circuits. It is also used in many consumer electronic devices, such as cameras, MP3 players, and other portable electronics.

Advantages of BFR 182 B6663

The BFR 182 B6663 transistor has some key advantages. First, it is capable of high frequency operation and does not require traditional external connections that might cause signal noise. It is also a heavy duty switching transistor and is well suited for use in medium and high frequency signal amplification applications. Additionally, it has a small size and low power loss, so it can be used in small and light-weight consumer electronics. Finally, it has a low voltage and high current gain, which makes it an ideal choice for low voltage and high current applications.

Working Principle of BFR 182 B6663

The working principle of the BFR 182 B6663 transistor is based on the combined effects of a p-type layer and an n-type layer within the same semiconductor crystal. A p-type layer consists of electrons that are holes or defects, and an n-type layer consists of electrons that are donated by doping other substances. The combined amount of current produced by these two layers is called the bipolar current. When a voltage is applied to the base terminal of the BFR 182 B6663 transistor, the base current is varied. This variation in current creates a current amplification effect between the base and collector terminals. This current amplification is useful in many applications, such as switching circuits, motor control, and audio amplification.

Conclusion

In conclusion, the BFR 182 B6663 transistor is a specific type of bi-polar junction transistor (BJT). It is designed with a built-in RF-leadless package, meaning it does not require traditional external connections that might cause signal noise. This makes it ideal for use in high-frequency applications, such as radio-frequency (RF) communications systems and microwave circuits. Additionally, it has a small size and low power loss, which makes it well suited for use in small and light-weight consumer electronic devices. Finally, its working principle is based on the combined effects of a p-type layer and an n-type layer. When a voltage is applied to the base terminal of the BFR 182 B6663 transistor, the base current is varied, creating a current amplification effect between the base and collector terminals.

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