Allicdata Part #: | BFR181TE6327-ND |
Manufacturer Part#: |
BFR 181T E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF NPN 12V SC-75 |
More Detail: | RF Transistor NPN 12V 20mA 8GHz 175mW Surface Moun... |
DataSheet: | BFR 181T E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz |
Gain: | 19.5dB |
Power - Max: | 175mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 5mA, 8V |
Current - Collector (Ic) (Max): | 20mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | PG-SC-75 |
Base Part Number: | BFR181 |
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RF transistors are often used in a wide variety of electronic devices. The BFR 181T E6327 is such a device, commonly used for wireless communication, such as for mobile phones, Bluetooth and other wireless communication. This transistor is constructed with a silicon-doped epitaxial layer and a high-impurity base, to provide superior high-frequency performance and stability. The device is ideal for use in moderate power amplifiers, due to its wide frequency response, low distortion, and low noise.
The BFR 181T is a high power, small signal, RF NPN transistor. It consists of two transistors, with an additional connection between the two. This connection allows for the formation of a combination amplifier and a single emitter. This simple design allows the transistor to be used in a wide variety of applications and provides the flexibility required in modern, high frequency circuits. Additionally, due to its high power and reliability, it can be used in applications where the output of the transistor needs to be isolated from that of the device.
The BFR 181T is designed to operate over a wide range of frequencies, from low frequencies up to high frequencies like 2.4 GHz. The device has good power dissipation and robustness properties, making it suitable for linear, high frequency applications. Due to its wide frequency response, the transistor can be used for both low power and high power applications. Additionally, the device has a low noise figure and excellent linearity, making it perfect for use in RF amplifiers, mixers and oscillators.
The working principle of the BFR 181T is relatively straightforward. The device requires a signal input and an bias voltage to turn on the device. Once turned on, the signal is amplified and divided into two parts: one portion is directed to the base of the transistor, while the other is directed to the collector. This signal causes the collector-emitter current to flow, resulting in amplification.
The BFR 181T is able to offer superior performance in various scenarios. For example, its low noise performance makes it ideal for digital data transmission. Additionally, its wide frequency response makes it suitable for use in low and medium level signal applications, such as amplifiers, mixers and oscillators. Its ruggedness and good power properties make it a suitable choice for high power applications. Furthermore, it can be used in audio applications, such as musical instruments or home entertainment systems.
In conclusion, the BFR 181T E6327 is an excellent choice for use in RF applications due to its performance, flexibility and robustness. Its wide frequency response and low noise figure make it suitable for use in a variety of applications. Additionally, it has excellent linearity, making it a great choice for linear and high frequency applications. Furthermore, the device is robust and provides good power dissipation, making it a good choice for high power applications. As a result, the BFR 181T E6327 is well-suited for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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