Allicdata Part #: | BFR949TE6327-ND |
Manufacturer Part#: |
BFR 949T E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF BIP SC-75 |
More Detail: | RF Transistor NPN 10V 35mA 9GHz 250mW Surface Moun... |
DataSheet: | BFR 949T E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1dB ~ 2.5dB @ 1GHz |
Gain: | 20dB |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 6V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | PG-SC-75 |
Description
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Introduction to BFR 949T E6327 Transistors
BFR 949T E6327 is a type of bipolar RF transistor manufactured by E-Switch Inc. that is designed for use in wireless applications such as wireless communications and signal amplification. The E6327 transistor operates in the frequency range of 0.2 to 3GHz with a maximum power dissipation rating of 25W.Application Fields and Working Principle
BFR 949T E6327 transistors can be used in a variety of applications including RF amplifiers, wideband amplifiers, personal communications systems, cellular telephones and other wireless applications. The transistors are highly stable, have low power dissipation, and are suitable for use in high-speed environments.The transistor operates by passing an electrical current through a transistor, which is a semiconductor device consisting of P-type and N-type materials. When current is passed through the device, the P-type material becomes negatively charged and the N-type material becomes positively charged, creating a barrier between them. This barrier allows current to flow only in one direction, allowing the transistor to amplify signals and other input signals.The BFR 949T E6327 is a highly efficient transistor and is capable of amplifying signals in a wide frequency range. This makes it an excellent choice for wireless applications, as it is capable of amplifying signals across a wide range of frequencies.The transistor also has a low power dissipation and is able to operate at operating temperatures up to 150°C and at high-temperature operation for extended periods of time. This makes it suitable for use in applications such as personal communications systems and cellular telephones that require a reliable source of power.Finally, the BFR 949T E6327 is a highly reliable transistor and is capable of withstanding high-voltage applications as well as extended periods of use. This makes it a highly reliable device for wireless applications requiring highly reliable performance.Conclusion
In conclusion, the BFR 949T E6327 is a highly reliable transistor ideal for use in a wide range of applications. With its wide frequency range and low power dissipation, the transistor is capable of providing reliable performance in high-speed, high-temperature environments. The transistor is capable of withstanding high-voltage applications and extended periods of use, making it ideal for use in high-reliability applications. As such, the BFR 949T E6327 is an excellent choice for wireless applications that require highly reliable performance.The specific data is subject to PDF, and the above content is for reference
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