BFR 193W E6327

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFR 193W E6327 transistor is an NPN transition-mode amplifier transistor manufactured by Infineon Technologies AG. It is intended for use in RF amplifier circuits.

The device is packaged in a ceramic, hermetically sealed flat pack, with the physical dimensions of 4.90 mm x 3.2 mm x 0.5 mm. This allows it to be used in compact circuit designs, maximizing the real estate on the circuit board. The maximum power dissipation of this device is 0.2 W.

The BFR 193W E6327 transistor is a typical NPN BJT operating in transition-mode. Apart from this it also features an improved second breakdown voltage and an improved transition frequency – which makes it suitable for use in RF applications. The maximum collector current for this device is 1.1 A, with the maximum rate of 150 mA/µs.

The device’s typical power gain (fT/hFE) is equal to 16.6/19 dB, and the maximum operating voltage is also equal to 16V. The operating frequency range of the device is 0.2 – 150 MHz. The device always comes with under-said limitations, as well as with a threshold voltage (VCEO) range of 16 – 24 V.

The BFR 193W E6327 transistor is mainly used in RF power amplifiers, and it is particularly suitable for use in satellite pay-tv receivers, SSB / AM / FM receivers, amplifiers, mixers, linear power amplifiers, and even switch mode controllers. It can also be used in various digital and analog circuit designs.

The working principle of the BFR 193W E6327 transistor is quite simple. It is a standard NPN BJT device; the voltage applied between its base and emitter terminals induces a small current on its base, which then results in significantly larger current on its collector terminal. This current can then be used to drive power amplifiers, mixers and other high-power circuits.

The current gain of the BFR 193W E6327 transistor is related to its second breakdown voltage, as well as its transition frequency. The second breakdown voltage also determines the maximum voltage at which the device can be operated; thus exceeding that maximum voltage might cause permanent damage to the transistor. As for its transition frequency, it measures the maximum frequency at which this device can be used – depending on its application.

To conclude, the BFR 193W E6327 is an NPN amplifier transistor which is manufactured by Infineon Technologies AG. It is a transition-mode amplifier transistor which is intended for use in RF amplifier circuits. The physical dimension of the device allows it to be used in compact circuit designs, and its typical power gain (fT/hFE) is equal to 16.6/19 dB. It is mainly used in RF power amplifiers, and its working principle is that of a standard NPN BJT.

The specific data is subject to PDF, and the above content is for reference