BFS 460L6 E6327

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):	5.8V
Frequency - Transition:	22GHz
Noise Figure (dB Typ @ f):	1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain:	10dB ~ 14.5dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 20mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-XFDFN
Supplier Device Package:	TSLP-6-1

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The BFS 460L6 E6327 is a high-performance, radio frequency (RF) bipolar junction transistor (BJT) designed for commercial and industrial applications. It is a 50V, 1A, 6W, NPN device that can operate up to 1GHz.The BFS 460L6 E6327 is an excellent choice for applications such as RF power amplifiers, microwave power amplifiers, RF amplifiers, power supplies and switching circuits. It is intended for use in high-reliability, military, and industrial applications. This device is RoHS and Pb free, and is lead-free and environment-friendly.The BFS 460L6 E6327 is designed to operate over a wide frequency range. Its maximum power rating of 6W and collector-to-emitter voltage rating of 50V make it suitable for a wide range of tasks. Furthermore, the transistor has low distortion, excellent stability and lower power consumption. Its low-noise feature also allows it to perform well in harsh environments, making it an ideal choice for applications such as medical imaging, radar systems and satellites.The BFS 460L6 E6327 is based on a unique design which integrates a unique combination of emitter, collector, and base electrodes to provide advanced performance. The transistor’s emitter terminal features a pair of contacts to create a three-point connection to the base electrode, while the collector and base terminals feature a single contact to provide improved electrical stability. In addition, the emitter contact includes a guard ring to reduce capacitance up to 10 pF and absorb input power up to 500V.The working principle of the BFS 460L6 E6327 transistor involves the flow of electrons from the emitter to the collector through the base. This process involves a voltage potential between the base and collector, and a current between the base and the emitter. The base-collector junction is forward biased, meaning that current flow from the base to the collector is enhanced. The base-emitter junction is reverse biased, meaning current flow from the base to the emitter is blocked.When voltage is applied to the base, a small current flows from the base to the emitter. This current is amplified by the collector and base voltage and a larger current is produced at the collector. The larger current can then be used to control a power circuit, such as a motor, or a switching circuit.The BFS 460L6 E6327 transistor is an ideal choice for a variety of applications in the commercial and industrial sector. Its advanced design offers excellent performance and stability, making it a reliable choice for high-definition circuit designs. The low distortion and power consumption features also make it suitable for medical imaging, radar systems and satellites.

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