BFS17HTA Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFS17HTA application field and working principle are specialized to utilize bipolar transistors in the radio frequency (RF) domain.

BFS17HTA is a type of NPN metal–oxide–semiconductor field-effect transistor (MOSFET), which is a component used to amplify electrical signals where extremely wide bandwidths and high levels of linearity are required. It is commonly used in RF communication systems and other construction tools.

BFS17HTA is designed with a gate lead on the gate-source voltage (VGS), gate–drain voltage (VGP), and a floating gate (FGS) to control the current flow from the gate to the drain. The FGS acts as a digital switch, flipping between device “on” and “off” states. This switching action is further aided by its built-in field-effect control (FEC), which reduces the gate–drain capacitance and enhances device switching action.

In “on” conditions the BFS17HTA exhibits a nearly constant behavior, allowing the amplification of the input signal and producing an extremely linear output. The element’s low-noise performance means that it can transmit signals over long-range distances with minimal interference.

The use of BFS17HTA transistors in RF systems is gaining popularity due to its high performance and ease of integration into existing circuits. For example, it has been successfully utilized in applications such as next generation 802.11ac WiFi systems, Bluetooth low energy (BLE) systems, radar systems and medical systems. Further, it can be used in networks that require extreme accuracy and high speed, such as military and commercial networks.

In terms of BFS17HTA\'s working principle, the transistor operates by controlling the amount of current that flows between the source and drain ends of the device using the voltage applied to the base terminal. When the voltage between the gate and source terminals is greater than the threshold voltage of the device, the transistor is “on” and current can flow from the source to the drain. On the other hand, when the voltage between the gate and source terminals is below the threshold voltage, the transistor is “off” and there is no current flow.

Further, the output current is typically varied as a function of time by applying a suitable voltage pulse to the base terminal. This pulse width modulation (PWM) technique performs a logical operation and is often used in applications where the required data transfer speeds are very high.

In summary, the BFS17HTA transistor is an essential component for RF applications in communication networks due to its high performance, ease of use and linearity. Its low-noise operation and wide bandwidths allow for signal transmission over long distances without any signal degradation. Additionally, its built-in FEC feature aid the installation process, enhancing the device’s switching and linearity performance.

The specific data is subject to PDF, and the above content is for reference