BFS17A,215 Allicdata Electronics

BFS17A,215 Discrete Semiconductor Products

Allicdata Part #:

568-1653-1-ND

Manufacturer Part#:

BFS17A,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 25MA 15V 3GHZ SOT23
More Detail: RF Transistor NPN 15V 25mA 2.8GHz 300mW Surface Mo...
DataSheet: BFS17A,215 datasheetBFS17A,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 2.8GHz
Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
Gain: --
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BFS17
Description

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Introduction

BFS17A,215 is a bipolar junction transistor (BJT) specifically designed for use in the radio frequency (RF) domain. These devices have numerous applications in the radio-frequency world, including the development of communications systems, the creation of high-frequency amplifiers and the generation of signals for short and long-range applications. Furthermore, a BFS17A,215 transistor is able to operate at high frequencies with an excellent efficiency, making them an attractive option for engineers creating RF systems. This article will provide an introduction to the many operating principles and applications of the BFS17A,215 transistor.

Operating Principle

The BFS17A,215 bipolar junction transistor is a network of three doped semiconductor regions which are typically formed through the diffusion of dopants into a single piece of semiconductor material or through the use of separate materials which can be joined together. The three regions are then connected together to form an emitter, base, and collector. The operation of the when compared to other types of transistors works similarly, with a small current at the base controlling a larger one at the collector. However, due to its versatility and ability to accommodate a wide range of frequencies, the BFS17A,215 is particularly well suited for RF applications.

Uses in the Radio Frequency Domain

The BFS17A,215 BJT is a popular choice for radio frequency applications due to its robust construction, excellent frequency response, and the fact that it can operate at higher frequencies than other transistors. One of the main uses of this transistor is the generation of RF signals. This can be used in land-based communications systems, or in marine and aerospace communications systems which require high stability and efficiency when transmitting signals at varying distances. This device is also used in the creation of high-frequency amplifiers which can help with boosting the efficiency of transmissions. Furthermore, the BFS17A,215 transistor can also be used in the development of specialised radar systems which rely on the accurate generation of specific radio frequencies.

Conclusion

The BFS17A,215 bipolar junction transistor is an excellent choice for radio frequency applications due to its excellent frequency response, efficient operation, and robust construction. It can be used in a variety of applications in the RF domain, such as the generation of RF signals for communications systems, the development of high-frequency amplifiers, and the construction of specialised radar systems. The BFS17A,215 provides an ideal RF transistor solution for many engineers.

The specific data is subject to PDF, and the above content is for reference

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