BFS19,235 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	30mA
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	65 @ 1mA, 10V
Power - Max:	250mW
Frequency - Transition:	260MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BFS19

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Introduction

BFS19,235 is a single bi-polar junction transistor (BJT) designed for a wide range of applications. It was developed by Philips and features low-noise performance, low collector-emitter saturation voltage and capability of handling signal frequencies from DC to 1MHz. The device is widely used in audio frequence amplifiers, switching applications and RF amplifiers. It is widely used in consumer electronics, telecommunications and industrial process control applications.

Overview of BFS19,235

The BFS19,235 is a low-power NPN BJT with a small signal current gain (hFE) rated from 100 to 600. It features a wide operating range of 4.75V to 25V, and a collector-emitter voltage (VCE) of 30V. The device comes in a small TO-186 package, measuring 4.47mm x 2.50mm x 3.2mm. The device also features robust package reliability, good thermal stability and high current gain at low temperatures. The device is available in both p-type and n-type versions.

Applications

BFS19,235 transistors can be used in a wide range of applications, including audio frequency amplifiers, switching applications, RF amplifiers and consumer electronics. It is also used in telecommunications, industrial process control and automotive applications.Applications of BFS19,235 transistors include:

• Audio Frequency Amplifiers
• Switching Applications
• RF Amplifiers
• Consumer Electronics
• Telecommunications
• Industrial Process Control
• Automotive Applications

Working Principle and Characteristics

The basic working principle of the BFS19,235 transistor is similar to any other bipolar junction transistor. The transistor has three main terminals: the base, the collector and the emitter. When current is applied to the base terminal, it causes a current to flow from the collector to the emitter terminals.The transistor has several important performance characteristics, including a high current-gain (hFE) ratio, low noise levels, and a wide frequency response range of DC to 1MHz. The hFE ratio indicates how many times a given current can be increased when passing through the BJT. Low noise levels are important for applications where circuit noise must be minimized. The wide frequency response means that the device can be used in a variety of applications, including RF and audio frequency applications.

Conclusion

The BFS19,235 single NPN bi-polar junction transistor has a wide range of applications, from audio frequency amplifiers and switching applications to RF amplifiers and consumer electronics. It features a wide operating range, low noise levels, and a wide frequency response of DC to 1MHz. The device is available in p-type and n-type versions and is an ideal choice for a variety of applications.

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