BFS17W,135

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	1.6GHz
Noise Figure (dB Typ @ f):	4.5dB @ 500MHz
Gain:	--
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 2mA, 1V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	BFS17

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BFS17W,135 Application Field and Working Principle

Transistors - Bipolar (BJT) - RF

Introduction

The BFS17W,135 is a customer-focused (RF) transistor designed for a variety of applications, including broadband microwave communication systems, direct broadcast satellite reception, high-speed use in cellular and VoIP telephone systems, and a variety of other applications. The main application of the BFS17W,135 is the generation of high-power output in the range of 0.7 to 8GHz, with a maximum output power of 6W typically.

Features

The BFS17W,135 utilizes industry-leading process technologies, giving it a level of performance, compactness, and flexibility that far exceeds other RF transistors. It boasts a UL®-certified thermal design that offers a low thermal resistance, making it a commonly preferred solution for applications operating in this range. Additionally, the BFS17W,135 is manufactured with SiGe:C technology, providing outstanding immunity and RF performance in a single-package solution. In addition to the thermal and process design benefits, the BFS17W,135 also features high reliability in operation, making it a good choice for high-end applications, and boasts excellent ESD protection, giving it a distinct advantage in radio frequency (RF) applications.

Working Principle

The BFS17W,135 operates on a Bipolar (BJT) transistors theoretically, which employs three terminal active device, made up of three layers of semiconductor material. One layer of the material is typically doped to be a lightly doped P-type layer (which makes up the collector of the device) and another layer of the material is a N-type material (which makes up the emitter). The third layer of the material (in the case of the BFS17W,135, the SiGe:C material) forms the base region. The BFS17W,135 has three different terminals, one each for the collector, emitter, and base regions. When the base region is positively biased, current is allowed to flow from the collector region to the emitter region. This current flow causes the transistor to conduct like a closed switch, allowing very high current levels through the transistor. This current flow houses an avalanche breakdown of the SiGe:C layer, ensuring it can handle gradual changes in voltage, current, and temperature. As a result, the BFS17W,135 is able to generate high-power output.

Conclusion

The BFS17W,135 is an advanced Bipolar (BJT) transistors with a SiGe:C technology offering outstanding immunity and RF performance. It boasts a UL®-certified thermal design, making it a commonly preferred solution for applications operating in this range. Additionally, the BFS17W,135 offers high reliability in operation, ESD protection, and the ability to generate high-power output, making it a popular choice for a variety of applications such as broadband microwave communication systems, direct broadcast satellite reception, and high-speed use in cellular and VoIP telephone systems.

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