BFS17NTA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	11V
Frequency - Transition:	3.2GHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	330mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	56 @ 5mA, 10V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	BFS17

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

BFS17NTA is a NPN high-frequency switch transistor, which is used in a wide range of circuits. It has excellent performance, low bias current, low noise, and a wide frequency range. Its maximum frequency is up to 1.7GHz and can be used for applications such as RF amplifiers, RF switches, microwave amplifiers and oscillators.

Basic Characteristics

The basic characteristics of the BFS17NTA transistor can be divided into two categories: DC characteristics and AC characteristics.

DC Characteristics

The BFS17NTA transistor has a very low offset voltage. The collector to emitter saturation voltage is less than 200mV. The breakdown voltage of collector-emitter is greater than 1.1V. The base-emitter voltage is greater than 1.2V. The collector-emitter leakage current is less than 10uA. The maximum collector current is 2A. Similarly, the limits of the maximum base current and power dissipation are also very low at 0.7A and 600mW respectively.

AC Characteristics

It provides excellent high-frequency performance with a maximum frequency of up to 1.7GHz. The gain bandwidth product is 500MHz and the transition frequency is 250MHz. The input capacitance of the transistor is 6pF. The collector efficiency is also very high at 99%.

Working Principle

BFS17NTA is a NPN bipolar junction transistor. It works on the principle of majority carriers, where the electrons are the majority carriers. In NPN transistors, the electrons move from the emitter to the collector when a positive voltage is applied to the base. This creates a current in the emitter-collector circuit. The amount of current flowing is determined by the resistance of the base-emitter junction and the amount of voltage applied.

Applications

The most common application of BFS17NTA transistors is in RF switching circuits. It can be used as a switch in RF switching circuits, such as antennas, low-noise amplifiers, power amplifiers and active filters. It is also used as an RF amplifier in cellular phones and other wireless devices. Its high performance and low noise make it an ideal choice for these applications. It is also used in microwave amplifiers and oscillators for high-frequency applications.The BFS17NTA transistor\'s excellent performance, low bias current, and low noise make it an ideal choice for a wide range of circuit applications. Its maximum frequency of 1.7GHz makes it suitable for use in RF switching and amplification circuits. Its wide range of operating characteristics make it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description