BFS17,235

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	1GHz
Noise Figure (dB Typ @ f):	4.5dB @ 500MHz
Gain:	--
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 2mA, 1V
Current - Collector (Ic) (Max):	25mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BFS17

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BFS17,235 Application Field and Working Principle

Introduction

BFS17,235 is a bipolar junction transistor (BJT) designed for operation in radio frequency (RF) applications. It is a three-layer silicon semiconductor device designed to be used as an amplifier, mixer, modulator, or oscillator. The BFS17,235 can be used in many different electronic applications including audio, video, and communications. In this article, we will discuss the application field and working principle of BFS17,235.

Application Field

BFS17,235 has several applications in both radio frequency and low frequency (LF) applications. In radio frequency (RF) applications, the BFS17,235 can be used as a mixer, amplifier, modulator or oscillator. It is especially suitable for applications where high linearity, low noise and high gain performance are needed. It is also capable of operating at frequencies up to 1.9 GHz. In low frequency applications, the BFS17,235 can be used as an amplifier, switch, or oscillator.

Working Principle

The BFS17,235 is a three-layer semiconductor device. It consists of a Base semiconductor layer, an Emitter semiconductor layer, and a Collector semiconductor layer. The Base layer forms the input to the transistor and the Emitter and Collector layers forms the output. The working principle of the BFS17,235 is similar to that of any other bipolar junction transistor (BJT). When a voltage is applied to the Base layer, a current flows from the Emitter to the Collector layer, thus amplifying the input signal. The output current is proportional to the input voltage and the gain of the BFS17,235 is determined by its internal design.

Conclusion

The BFS17,235 is a bipolar junction transistor (BJT) designed for radio frequency (RF) applications. It can be used as an amplifier, mixer, modulator, or oscillator at frequencies up to 1.9 GHz. BFS17,235 can also be used in low frequency (LF) applications as an amplifier, switch, or oscillator. The working principle of the BFS17,235 is similar to that of any other bipolar junction transistor (BJT). When a voltage is applied to the Base layer, a current flows from the Emitter to the Collector layer, thus amplifying the input signal. The output current is proportional to the input voltage and the gain of the BFS17,235 is determined by its internal design. With its superior performance and wide range of applications, the BFS17,235 is suitable for many different electronic applications.

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