Allicdata Part #: | BFS17HTC-ND |
Manufacturer Part#: |
BFS17HTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANSISTOR RF NPN SOT23-3 |
More Detail: | RF Transistor NPN 15V 25mA 1.3GHz 330mW Surface Mo... |
DataSheet: | BFS17HTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1.3GHz |
Noise Figure (dB Typ @ f): | 4.5dB @ 500MHz |
Gain: | -- |
Power - Max: | 330mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 2mA, 1V |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BFS17 |
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BFS17HTC Application Field and Working Principle
The BFS17HTC belongs to a type of transistor termed Bipolar Junction Transistor (BJT). These transistors are used widely to provide amplification and/or switching of signals in electronic circuits. The BFS17HTC is an RF (Radio Frequency) transistor, which is particularly used in applications requiring amplification of signals in the MHz frequency range.
One of the main advantages of using a BJT is that a very large current and voltage can be controlled with a small signal voltage by varying the base-emitter voltage. In terms of the BFS17HTC, this means that an input signal can be amplified by a factor of up to 250 (at a frequency of 1.7GHz). As such, this model of transistor is ideal for use in a variety of electronic circuits requiring signal amplification, particularly when operating at radio frequencies.
The BFS17HTC also features an incredibly low thermal resistance (2Ω) which enables the transistor to remain cool during operation. Furthermore, this transistor also has a low collector-base breakdown voltage (Vceo) of 25V which is capable of blocking potential damage to sensitive circuits due to its comparatively low voltage.
The BFS17HTC operates according to its own particular working principle. Describing this in detail is possible, however, the key concept to understand is the Collector-Base Junction. This is the point at which the collector and base of the transistor are connected. Here, a very small current flows from the base to the collector. This current is known as the base current and is typically very small compared to the collector current which flows from collector to emitter.
The interaction between the base and the collector results in amplification of the base current which is driven to the collector. This allows for amplification of the input signal which is reliant on the gain of the transistor. The BFS17HTC has a large current gain (hfe) of around 200, which allows for significant amplification of RF signals.
In summary, the BFS17HTC is a BJT which is used in radio frequency-based electronic circuits. It has a large current gain of up to 200 and low thermal resistance of 2Ω, allowing it to operate with minimal heat build-up. Its low collector-base breakdown voltage (Vceo) is an ideal safety feature for protecting sensitive circuits. Finally, the BFS17HTC works by providing amplification to a small base current which is subsequently driven to the collector.
The specific data is subject to PDF, and the above content is for reference
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