BFS17WH6327XTSA1 Discrete Semiconductor Products

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The BFS17WH6327XTSA1 is a type of Bipolar junction transistor (BJT) used in radio-frequency (RF) applications. Joining two types of semiconductor materials, the transistor acts as an amplifier and switch, allowing it to be used in the wide range of RF applications. The device is a Surface-Mounted Leaded (SMD) type transistor. This article provides an overview of the device, its application field and working principle.

Overview of the BFS17WH6327XTSA1

The BFS17WH6327XTSA1 is a NPN SMD transistor designed for use in RF applications. It has a maximum collector-emitter voltage (VCE) of 80V, a maximum collector current (IC) of 200mA, and a maximum frequency of 340MHz. Additionally, the operating temperature range is from -55°C to +150°C. It is rated at 250mW maximum power dissipation, and the package includes a collect counter and an encapsulate holding.

Application Field

The BFS17WH6327XTSA1 offers excellent performances in many radio-frequency applications, including:

• RF switches for general purpose applications, such as Bluetooth and Wi-Fi.
• RF amplifiers for general purpose applications, such as mobile phone antennas and wireless base stations.
• RF mixers for generating and receiving signals of different frequencies.
• RF quadplexers used in the communication and military sectors.
• RF phase shifters for controlling the phase relationship between two signals.

Due to its guaranteed thermal resistance, isolation voltage, and breakdown voltage ratings, the BFS17WH6327XTSA1 is a popular device for protection against static electricity and other overvoltage conditions.

Working Principle

The BFS17WH6327XTSA1 is a three-terminal (NPN) transistor. It has a collector, an emitter, and a base. The emitter is the negative terminal and is connected to ground. The collector is the positive terminal and is connected to the load. The base is the control terminal and is connected to the input signal. When a positive voltage is applied to the base, it controls the switch and turns on the transistor. This allows current to flow from the collector to the emitter. On the other hand, when a negative voltage is applied to the base, it turns off the transistor and the circuit is disconnected. This allows for the transistor to be used as an amplifier or switch in RF applications.

Conclusion

The BFS17WH6327XTSA1 is a type of NPN SMD transistor designed for use in radio-frequency applications. It is rated at 250mW maximum power dissipation and offers excellent performances in a wide range of RF applications. Its working principle is based on the three-terminal (NPN) transistor, with a collector, emitter, and base. A positive voltage applied to the base turns on the transistor and allows current to flow, while a negative voltage turns off the transistor and disconnects the circuit.

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