BFS17W,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1990-2-ND |
Manufacturer Part#: |
BFS17W,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 15V 1GHZ SOT323 |
More Detail: | RF Transistor NPN 15V 50mA 1.6GHz 300mW Surface Mo... |
DataSheet: | BFS17W,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1.6GHz |
Noise Figure (dB Typ @ f): | 4.5dB @ 500MHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 2mA, 1V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BFS17 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
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BFS17W,115 Transistor - Bipolar (BJT) - RF
The BFS17W,115 is a transistor designed to operate in radio frequency (RF) applications. It has a leadless 3-pin package and is designed to deliver low off-state leakage currents and high-frequency switching speeds. It can be used in low power applications, where high-speed and low noise are important considerations.
The BFS17W,115 is a NPN bipolar junction transistor with a traditional HBT structure. It has a high gain-bandwidth product of up to 200MHz, low input and output capacitances, and a breakout frequency of up to 850MHz. As a result, it is capable of delivering high-frequency switching speeds with good linearity and power efficiency. It also has low off-state leakage currents, which makes it suitable for use in low power applications.
The BFS17W,115 has several advantages over other RF transistors. Its dielectric layer is protected by a soldering process, making it resistant to thermal shock and vibration. Additionally, its high electron and hole carrier mobilities provide higher operating speeds and reduced distortion. Its low drive currents reduce power consumption, making it suitable for use in battery operated applications.
The BFS17W,115 can be used in a variety of RF applications. It has been used in radio receivers, transmitters, and amplifiers. It is also used in TV modulators and receivers, communication systems, and microwave components. Its low noise and high speed switching capabilities make it suitable for use in low power applications, including mobile phones and PDAs.
The BFS17W,115 is an excellent choice for RF applications due to its high gain-bandwidth product, low input and output capacitances, and low off-state leakage currents. Its high electron and hole carrier mobilities make it ideal for applications requiring high-speed switching and reduced distortion. Its dielectric layer is protected by a soldering process, making it resistant to thermal shock and vibration. Furthermore, its low drive current reduces power consumption, making it suitable for use in battery operated applications. As a result, the BFS17W,115 is an ideal choice for a variety of RF applications, including radio receivers, transmitters, and amplifiers, as well as TV modulators and receivers, communication systems, and microwave components.
The specific data is subject to PDF, and the above content is for reference
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