Allicdata Part #: | BFS17SE6327HTSA1TR-ND |
Manufacturer Part#: |
BFS17SE6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DUAL NPN TRANS RADIO FREQ BROAD |
More Detail: | RF Transistor 2 NPN (Dual) 15V 25mA 1.4GHz 280mW S... |
DataSheet: | BFS17SE6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1.4GHz |
Noise Figure (dB Typ @ f): | 3dB ~ 5dB @ 800MHz |
Gain: | -- |
Power - Max: | 280mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 2mA, 1V |
Current - Collector (Ic) (Max): | 25mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: | PG-SOT363-6 |
Base Part Number: | BFS17 |
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The BFS17SE6327HTSA1 is a high performing transistor designed to be used in RF, or radio frequency systems. Its application field and working principle depend on the breakdown voltage it provides, making it suitable for a wide range of radio frequencies and frequencies above the radio spectrum.
BFS17SE6327HTSA1 transistors are used in the design of radio receivers and transmitters, amplifier circuits, and other types of electronics that require high-frequency stability and reliable performance. The main features of this transistor include low current gain (hfe) and a high breakdown voltage, which ensures reliability and excellent performance. The transistor also offers a wide frequency range and is suitable for a variety of applications.
BFS17SE6327HTSA1 transistors are widely used in applications such as high power RF, VHF, UHF, and FM radio receivers. They are also used in automotive, amateur radio, satellite communications, and telecoms systems. The transistor can be used in the design of amplifiers, receivers, oscillators, resonators, mixers, voltage regulators, and other electronic equipment.
BFS17SE6327HTSA1 transistors operate on a basic principle known as bipolar junction transistor (BJT) or junction-gate field-effect transistor (JFET) operation. This principle uses a junction between two distinct materials, such as silicon and germanium, to control and amplify electrical signals. In BJT mode, the base-emitter current junction is used to control the amount of current flowing through the transistor, allowing the user to control the amount of voltage supplied to the load. The JFET mode, meanwhile, uses a gate-source voltage to control current and voltage levels, allowing the user to control the amount of current supplied to the load.
BFS17SE6327HTSA1 transistors are capable of handling large currents, so they are an excellent choice for high-power applications. They are usually packaged in hermetically sealed cases with slow short circuit protection and thermal overload protection. To prevent undesirable switch-off during power-on and power-off operations, the transistors have an internal start lock-out capability. This product is available in a variety of packaging styles.
In conclusion, the BFS17SE6327HTSA1 is a high-performance transistor, offering features such as low current gain, a wide frequency range, and fast switching speeds. The transistor is suitable for a wide range of applications, including RF systems, amplifiers, receivers, oscillators, mixers, voltage regulators, and other electronic equipment. It is capable of handling large currents, making it an excellent choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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