BLF2425M7LS250P,11

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The BLF2425M7LS250P is a RF Transistor MOSFET. It is a high voltage, high frequency N-channel MOSFET and is characterized as low gate charge and low gate resistance.

The device comes in a plastic SOT-89-7L package and is suitable for use in high-current RF switching applications in cellular, Wi-Ser and other radio frequency (RF) applications.

Applications

The BLF2425M7LS250P is suitable for applications such as:

• RF power amplifier
• RF switches and high-power attenuators
• RF high-power switching
• Broadband amplifiers
• High-speed switching
• Base station power amplifiers
• Telemetry and modem circuits

Working Principle

The working principle of the BLF2425M7LS250P is based on the MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The MOSFET is a type of transistor that uses an electric field as its control element. The voltage applied to the gate determines whether current can flow between the source and the drain. When the gate voltage is high, current can flow and when it is low, current will not flow.

The BLF2425M7LS250P is an N-channel MOSFET with an on-state resistance (RDSon) of 250mΩ and a drain to source voltage (VDS) of 28V. The maximum power dissipation of the device is 2.7W and the maximum operating frequency is 800MHz.

The device also has a low gate charge of 23nC, which makes it suitable for applications where a high-speed switching is required. The device also has a low gate resistance of 0.37Ω which makes it useful for applications in high-current RF switching.

Conclusion

The BLF2425M7LS250P is a high voltage, high frequency N-channel MOSFET. It is suitable for applications that require a high-current RF switching, broadband amplifiers and high-speed switching. It has a low gate charge and low gate resistance, making it a suitable choice for such applications.

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