BLF2045,112

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The BLF2045,112 from PHILIPS is a monolithic N-channel RF FET designed for VHF and UHF TV, CATV and FM radio transmission applications. This FET provides especially good performance in applications such as high-gain amplifiers, oscillators, and frequency multipliers.

The BLF2045,112 consists of an N-channel JFET that is combined with a gate-controlled MoSFET to provide excellent frequency response, low harmonic distortion, and high linear gain. This transistor features a gate-controlled impedance of 3 Ohms and a maximum gate-source voltage of 40V. It can be used with a wide range of power levels and supply voltages (from 6V to 40V).

The BLF2045,112 has a working frequency range of 50MHz to 1GHz. It is rated at an output power of 2W, and it can operate over a temperature range of -55°C to +105°C. The FET also has an impressive Gain Bandwidth Product of 40 GHz.

The working principle of the BLF2045,112 is based on the enhancement-mode MOSFET structure. The idea is to use a gate signal to control the current flow through the MOSFET. When the gate signal is low, the N-channel JFET will be off and the current will be blocked. When the gate signal is high, the N-channel JFET will be on and current will flow freely. This allows the transistor to be used as an amplifier, a switch, or an oscillator, depending on the application.

The BLF2045,112 is widely used in RF applications such as VHF and UHF TV, CATV, and FM radio transmission. It is also used in high-gain amplifiers, oscillators, and frequency multipliers. The FET is used to provide excellent frequency response, low harmonic distortion, and high linear gain.

In summary, the BLF2045,112 from PHILIPS is an N-channel RF FET designed for VHF and UHF TV, CATV, and FM radio transmission applications. It is composed of an N-channel JFET and a gate-controlled MoSFET for excellent frequency response and linear gain. The FET has a maximum gate-source voltage of 40V and can operate between a power range of 6V to 40V. The working frequency range is between 50MHz to 1GHz and gain bandwidth is 40GHz. Its working principle is based on an enhancement-mode MOSFET structure, making it suitable for use as an amplifier, a switch, or an oscillator.

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