BLF2425M6LS180P:11

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.45GHz
Gain:	13.3dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	10mA
Power - Output:	180W
Voltage - Rated:	65V
Package / Case:	SOT539B
Supplier Device Package:	SOT539B
Base Part Number:	BLF2425

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Transistors - FETs, MOSFETs - RFBLF2425M6LS180P:11 is a widely used in high frequency power devices due to its excellent RF performance. It has been widely used as switch, amplifier, and attenuator in all kinds of radio frequency applications. This article will discuss the application and working principle of this device.BLF2425M6LS180P:11 is a N-Channel, Depletion-Mode RF MOSFET. It utilizes a vertical DMOS structure, incorporating multiple vertical channels which share a common gate contact, giving the device superior RF characteristics. The device has a low threshold gate voltage, providing high input impedance and low output resistance characteristics.The BLF2425M6LS180P:11’s applications include microwave and millimeter-wave switching, small signal attenuation and amplification, power amplifiers and other high frequency applications. The device is available in a variety of different package styles, with different types of gate contacts, to fit the needs of different applications.The working principle of BLF2425M6LS180P:11 is based on the principle of a metal oxide field effect transistor (MOSFET). It is a three-terminal device that is composed of an n-channel and p-channel MOSFET. The MOSFET works by controllably allowing electrons to pass through its gate contact. Using the gate voltage, the conductivity between the drain and source terminals can be modulated.The device works through a complex electron transport chain. An applied gate voltage causes electrons from the source to move toward the drain. These electrons interact with the insulating material on the surface of the metal oxide layer. This interaction creates an electrostatic field, which modulates the amount of electron flow between the source and the drain. The modulation of the electron flow is responsible for the device’s characteristic voltage-dependent current flow.The use of BLF2425M6LS180P:11 in RF applications is due to its high transconductance and low noise figures. The device’s linear operation also makes it suitable for use as a switch and attenuator, especially in high-speed applications. The device is energy efficient and also provides excellent heat dissipation.In summary, BLF2425M6LS180P:11 is an excellent RF MOSFET device. Its low impedance, high transconductance and low noise figures make it especially suitable for use in RF applications. The device’s linear operation allows it to be used as a switch and attenuator in high-speed applications. It is also energy efficient and provides good thermal management.

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