BLF2425M9L30U

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.45GHz
Gain:	18.5dB
Voltage - Test:	32V
Current Rating:	--
Noise Figure:	--
Current - Test:	20mA
Power - Output:	30W
Voltage - Rated:	65V
Package / Case:	SOT-1135A
Supplier Device Package:	SOT1135A

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The BLF2425M9L30U device is an N-channel, enhancement-mode Field-Effect Transistor (FET) specifically designed and optimized for the radio frequency (RF) power amplifier and low noise amplifier applications. This device was built using Aluminum Gallium Nitride (AlGaN/GaN) technology to provide superior performance when being utilized in RF Amp and LNA applications. The use of AlGaN/GaN tech results in a power density that is greater than traditional semiconductor technologies as well as a broad range frequency operation up to 6 GHz. Working PrincipleThe BLF2425M9L30U device works on the principle of how an electric field affects the conductivity of a semiconductor. The flow of charge carriers in a semiconductor is controlled by an electric field, and when an electric field is applied to a p-n junction, it creates the so-called depletion regions. The electric field gives rise to a potential barrier at the junction preventing the flow of carriers from one side of the junction to the other. By applying a voltage to the gate of a FET device, the electric field developed between the source and the drain causes a change in the conductivity of the channel and subsequently allows for conduction of current. This voltage controls the strength of the static electric field between the source and the drain, and therefore is the primary factor in determining when conduction occurs.The BLF2425M9L30U device was designed to provide superior performance in RF power amplifier and low noise amplifier applications. It utilizes a self-aligned structure with a single gate pad that provides an excellent input impedance while reducing the complexity of the layout. Additionally, the high drain-source breakdown voltage (BVDSS) rating of the device ensures that it can withstand high voltages.Application FieldThe BLF2425M9L30U device was designed for use in RF power amplifier and Low Noise Amplifier (LNA) applications where superior performance is required. The high power density and wide frequency range of the device makes it perfectly suited for high power bidirectional amplifiers used in the High Throughput Satellite (HTS) market. It can also be used in low power, low noise amplifier applications such as point-to-point microwave, land mobile radio and cellular infrastructure base station applications.In addition to the wide range of applications in the telecommunications market, the BLF2425M9L30U device can also be used in medical, automotive, avionics, and industrial applications. The device’s low noise figure, high power density, high breakdown voltage, and low gate charge makes it an ideal choice for applications in these markets.ConclusionThe BLF2425M9L30U device is a high power Field-Effect Transistor (FET) device developed using Aluminum Gallium Nitride (AlGaN/GaN) technology. The device was designed to provide superior performance in RF power amplifier and low noise amplifier applications. This device has a wide range of applications, including telecommunications, medical, automotive, avionics, and industrial applications. Thanks to the high power density and wide frequency range of the device, along with the low gate charge and high breakdown voltage, it is an ideal choice for applications that require superior performance.

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