BLF2425M9LS30J

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BLF2425M9LS30J is a drain-source voltage type enhancement-mode radio frequency power MOSFET (metal oxide semi-conductor field-effect transistor). It is designed as a device for applications such as high power linear amplification in thecommercial and industrial radio frequency (RF) range. The gate and drain terminals of the MOSFET are formed on a semiconductor circuit die that is enclosed in a hermetically sealed container.

Application field

BLF2425M9LS30J is suitable for high frequency power amplifiers operating up to 2 GHz, and can be used to increase the power of signals in a wide range of applications such as point-to-point radio communication, radar, remote control and navigation systems. The device is characterized by low power consumption and fast switching properties, making it a preferred choice for its low-power, high-performance and reliable exercise.

Working Principle

The BLF2425M9LS30J is powered by three separate electrodes: gate, source, and drain. Applying a voltage to the gate terminal will cause an electric field to form in the area of the silicon substrate between the gate and the drain. This electric field will induce a current to flow from the drain to the source, allowing the majority carriers a direct path from the drain to the source.

The source-to-drain current is proportional to the gate-to-source voltage, and depending on the polarity of the applied gate voltage, the drain current can either increase or decrease. This allows for the MOSFET to be used as a voltage-controlled switch, with a high drain-to-source resistance in the OFF state, and low resistance in the ON state. In the OFF state, the only contribution to the drain current comes from leakage currents, which are usually ignored in most applications.

The on-state (or saturated) current of the BLF2425M9LS30J is temperature dependent, allowing for highly efficient heat management. The operating voltage range of the MOSFET is from -30 VDC to +30 VDC; however, for best performance and efficiency, the gate-to-source + voltage should be maintained between 0 and -10 VDC.

Conclusion

In conclusion, the BLF2425M9LS30J is a versatile power MOSFET that can be used in many different applications. It is characterized by low power consumption and fast switching properties, making it a preferred choice for its low-power, high-performance and reliable exercise.

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