| Allicdata Part #: | BLF2425M6LS180P,11-ND |
| Manufacturer Part#: |
BLF2425M6LS180P,11 |
| Price: | $ 102.10 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 65V 13.3DB SOT539B |
| More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 10mA 2.4... |
| DataSheet: |  BLF2425M6LS180P,11 Datasheet/PDF |
| Quantity: | 1000 |
| 60 +: | $ 92.82770 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Last Time Buy |
| Transistor Type: | LDMOS (Dual), Common Source |
| Frequency: | 2.45GHz |
| Gain: | 13.3dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 10mA |
| Power - Output: | 180W |
| Voltage - Rated: | 65V |
| Package / Case: | SOT539B |
| Supplier Device Package: | SOT539B |
| Base Part Number: | BLF2425 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLF2425M6LS180P is a type of field effect transistor (FET), a type of transistor which can be used as an amplifier or switch in radios, radios, or high-frequency digital systems. It is also known as a MOSFET (metal oxide semiconductor FET) due to its use of a metal oxide semiconductor as a gate material. This FET is designed to work in the radio frequency (RF) range and is used in a variety of applications.In this article, we will look at the characteristics of BLF2425M6LS180P, the application of this device, and the working principle behind its operation.CharacteristicsBLF2425M6LS180P is a N-channel enhancement mode FET which has a breakdown voltage of 25 volts, a peak drain current of 180 mA, and a drain-to-source voltage of 45 volts. It has a low input capacitance of 28 pF and a low input bias current of 2.5 mA. The on-resistance of this device is 1.5 ohms, and the maximum drain current is 1.5A.ApplicationAs a FET, BLF2425M6LS180P can be used as an amplifier or switch for radios, radios, or high-frequency digital systems. It is suitable for use in amplification, switching, and voltage regulation applications which need a low input current, low power consumption, and low thermal resistance. BLF2425M6LS180P is also suitable for use in low-noise amplifiers (LNAs) which require high linearity and low supply current.Furthermore, BLF2425M6LS180P is also commonly used in power amplifiers (PAs) in applications where high power efficiency and low switching noise are required. It is also used as a switch in wireless local area networks (WLANs) and wireless wide area networks (WWANs) due to its low input capacitance and low input bias current.Working PrincipleBLF2425M6LS180P operates based on the principle of source-drain flow. When a positive voltage is applied to the gate, it attracts electrons from the source to the drain. This results in a flow of current, called the source-drain current, through the device. This current is determined by the resistance of the channel between the source and the drain and the voltage that is applied to the gate.The source and drain terminals of the BLF2425M6LS180P can be used as an amplifier or switch, depending on the current gain which is needed. At high gains, the device acts as an amplifier, while at low gains, it acts as a switch. The gain of the device is determined by the ratio of the drain and source currents, which can be controlled by adjusting the gate voltage.ConclusionBLF2425M6LS180P is a type of metal oxide semiconductor FET designed to work in the radio frequency (RF) range. It has a low input capacitance and low input bias current, making it suited to applications which require low power consumption and high linearity. This device can be used as an amplifier or switch in radios, radios, or high-frequency digital systems, and is also widely used in power amplifiers, low-noise amplifiers, and wireless networks. It works based on the principle of source-drain flow, and its current gain can be adjusted by adjusting the gate voltage.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "BLF2" Included word is 40
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| BLF2425M9L30U | Ampleon USA ... | 33.01 $ | 168 | RF FET LDMOS 65V 18.5DB S... |
| BLF2425M7L250P,112 | Ampleon USA ... | 74.05 $ | 100 | RF FET LDMOS 65V 15DB SOT... |
| BLF2425M8LS140U | Ampleon USA ... | 92.08 $ | 91 | RF FET LDMOS 65V 19DB SOT... |
| BLF2425M9LS140U | Ampleon USA ... | 42.5 $ | 67 | TRANS RF 140W LDMOSTRF Mo... |
| BLF2425M8L140U | Ampleon USA ... | 42.5 $ | 61 | RF FET LDMOS 65V 19DB SOT... |
| BLF2425M9LS30U | Ampleon USA ... | 33.01 $ | 60 | RF FET LDMOS 65V 18.5DB S... |
| BLF2425M7LS250P,11 | Ampleon USA ... | 74.05 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
| BLF2324M8LS200PU | Ampleon USA ... | 112.77 $ | 1000 | RF FET LDMOS 65V 17.2DB S... |
| BLF25M612G,112 | Ampleon USA ... | 25.91 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF25M612,112 | Ampleon USA ... | 25.91 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF25M612G,118 | Ampleon USA ... | 25.91 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF25M612,118 | Ampleon USA ... | 25.91 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF2425M9L30J | Ampleon USA ... | 26.74 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF2425M9LS30J | Ampleon USA ... | 26.74 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF2425M8L140J | Ampleon USA ... | 35.81 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF2425M9LS140J | Ampleon USA ... | 35.81 $ | 1000 | TRANS RF 140W LDMOSTRF Mo... |
| BLF2425M7L250P,118 | Ampleon USA ... | 63.54 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
| BLF2425M7LS250P:11 | Ampleon USA ... | 63.54 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
| BLF2425M7L100J | Ampleon USA ... | 65.14 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF2425M7LS100J | Ampleon USA ... | 65.14 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF2425M7L100U | Ampleon USA ... | 70.04 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF2425M7LS100U | Ampleon USA ... | 70.04 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF2425M7L140,118 | Ampleon USA ... | 81.5 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF2425M7LS140,118 | Ampleon USA ... | 81.5 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF2425M8LS140J | Ampleon USA ... | 81.5 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
| BLF2425M7L140,112 | Ampleon USA ... | 85.86 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF2425M7LS140,112 | Ampleon USA ... | 85.86 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF2425M6L180P,118 | Ampleon USA ... | 99.04 $ | 1000 | RF FET LDMOS 65V 13.3DB S... |
| BLF2425M6LS180P:11 | Ampleon USA ... | 99.04 $ | 1000 | RF FET LDMOS 65V 13.3DB S... |
| BLF2425M6L180P,112 | Ampleon USA ... | 102.1 $ | 1000 | RF FET LDMOS 65V 13.3DB S... |
| BLF2425M6LS180P,11 | Ampleon USA ... | 102.1 $ | 1000 | RF FET LDMOS 65V 13.3DB S... |
| BLF2324M8LS200PJ | Ampleon USA ... | 102.45 $ | 1000 | RF FET LDMOS 65V 17.2DB S... |
| BLF2043,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 75V 12.5DB S... |
| BLF202,115 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 40V 13DB SOT4... |
| BLF246,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 18DB SOT1... |
| BLF245,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET NCHA 65V 15.5DB SO... |
| BLF2045,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 10DB SOT... |
| BLF245B,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET 2 NC 65V 18DB SOT2... |
| BLF2043F,135 | Ampleon USA ... | 98.5 $ | 230 | RF FET LDMOS 65V 11DB SOT... |
| BLF2043F,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 11DB SOT... |
Latest Products
MRF6S21050LR3
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
MRF6S18060NR1
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
MRF1550NT1
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
MRF8S21100HSR3
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
LET16060C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
LET16045C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...