BLF2425M7LS140,118

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
Transistor Type:	LDMOS
Frequency:	2.45GHz
Gain:	18.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	140W
Voltage - Rated:	65V
Package / Case:	SOT-502B
Supplier Device Package:	SOT502B
Base Part Number:	BLF2425

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The BLF2425M7LS140,118 is a small signal, high power, laterally diffused Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) optimized specifically for radio frequency (RF) applications. This device has excellent RF performance and is especially suitable for use in switching power amplifiers, frequency multipliers, mixer stages and linear amplifiers operating up to pull-in frequency.The BLF2425M7LS140,118 MOSFET is constructed using most advanced semiconductor technologies, where the device consists of three sections; the Substrate, the Channel and the Gates (Drain, Source and Gate). It is designed for low voltage and high power switching applications in power conversion products like wireless charging and various other consumer applications. The substrate helps to guide and dissipate heat from the MOSFET and also helps to reduce the leakage current. The channel is the part of the MOSFET which carries voltage and current and is made from high quality Silicon. The gates are connected to the drain, source and substrate and are used to control the on/off states of the MOSFET.The working principle of the BLF2425M7LS140,118 is the same as other MOSFET devices. When a positive electrical signal is applied between the gate and the source terminal, an electrical field is created on the surface of the channel. This electrical field attracts electrons in the channel and creates a conductive pathway through the channel. This allows a current to flow between the drain and the source, turning the device fully on. By adjusting the voltage applied at the gate, the MOSFET can be adjusted to create a desired level of current and resistance in the drain to source line.When the BLF2425M7LS140,118 is placed in applications like Radio Frequency and switching power amplifiers, the device operates at very high frequency allowing for a smaller size and improved overall performance. This is due to its superior switching power, high gain, low noise, low gate threshold and low gate leakage, which is essential for RF applications.In conclusion, the BLF2425M7LS140,118 is an ideal MOSFET for RF applications due to its excellent RF performance, small size and superior switching power. It is designed for use in applications like switching power amplifiers, frequency multipliers, mixer stages and linear amplifiers working up to a pull-in frequency of 10 GHz.

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