BLF245B,112

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLF245B,112 is a high-power N-type field effect transistor (FET) designed for radio frequency (RF) applications. It is a power amplifier for RF applications with high gain, low noise and good device matching over a wide range of input conditions. This device can be used in a wide range of RF and microwave applications such as cellular base station amplifiers, wireless data systems, industrial, scientific and medical (ISM) devices and others.

The BLF245B,112 has an output power of 1 watt, an impressive gain of 13 dB, and an impedance of 50 ohms. It has a good thermal stability and is designed to operate over a temperature range of -40°C to +175°C. It has a low thermal resistance and features a low gate charge and low gate resistance. The gate bias is low, which allows for greater control of the transistor.

The BLF245B,112 is an N-channel FET device. It has an input referred N-type gate and an output referred P-type drain. The source is connected to the substrate. When a voltage is applied to the gate, it induces a channel of electrons from source to drain, thus allowing current to flow from source to drain.

The working principle of the BLF245B,112 is based on the principle of depletion mode FET. When a voltage is applied to the gate, it depletes the channel of free electrons at the drain, thus making it harder for current to flow. To reduce this effect, certain amount of voltage needs to be applied. This is known as the reverse bias voltage, VGS. The higher the VGS, the higher the drain current or ID. Overdrain current can cause the device to fail, so the VGS should be carefully selected to prevent this.

Since the BLF245B,112 has a high-power output and good performance, it is ideal for applications such as cellular base station amplifiers, wireless data systems, ISM devices, and many others. The low gate charge and gate resistance make it easy to control and the low power consumption ensures that it does not draw too much energy from the circuit. Additionally, its wide temperature range means that it can be used in both cold and hot environment.

In summary, the BLF245B,112 is a very reliable and efficient FET for radio frequency applications. It has a low gate charge and gate resistance, making it easy to control. It also has a wide temperature range, making it suitable for both hot and cold applications. Its high-power output and good performance make it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference