BLF988,112

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The BLF988,112 is a power LDMOS microwave transistor from NXP Semiconductors designed for wideband applications such as mobile communication, broadcasting, satellite communications and broadcast television. It is a laterally diffused metal-oxide semiconductor field-effect transistor (LDMOS FET) that features an integral gate protection diode for protection against electrostatic discharge (ESD). It operates from 2.5V and delivers a drain efficiency of up to 82%.

Features

• Integral gate protection diode
• Maximum power gain of 12 dB
• Output power of 12.9 W at 17.5 V
• Operating frequency from 400 MHz to 3 GHz
• Drain efficiency of up to 82%

Typical Applications

• RF amplifiers
• Broadcast television
• Mobile communication
• Broadcasting
• Satellite communications

Working Principle

The BLF988,112 is a laterally diffused metal-oxide semiconductor field-effect transistor (LDMOS FET) that works by controlling the flow of current through a channel, which is formed beneath the source, gate and drain terminals. The source provides a constant supply of electrons, while the gate controls the flow of electrons between the source and drain terminals. By applying a voltage to the gate terminal, the FET can be switched on or off. This allows the device to act as an amplifier or switch, depending on how it is used.

The BLF988,112 uses the integrated gate protection diode to protect the transistor from ESD damage. The diode acts as a short-circuit between the gate and the source terminal, preventing any voltage from being applied to the gate. This reduces the chances of accidentally damaging the transistor due to electrostatic discharge.

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